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1N5235 A2927SEB 0442011 COMPONEN 216X7 000WD ST3222C ASI10607
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  4.720v Datasheet PDF File

For 4.720v Found Datasheets File :: 473    Search Time::1.937ms    
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    Infineon Technologies
Part No. H30T90
OCR Text ...(th) i c =150 a, v ce = v ge 4.6 5.3 6 v zero gate voltage collector current i ces v ce =900v , v ge =0v t j =25 c t j =150 ...720v, i c =30a v ge =15v - 280 - nc internal emitter inductance measured 5mm (0.197 in.) from...
Description IGBT

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    IRGPF50F 2003 IRGPF50

International Rectifier
Part No. IRGPF50F 2003 IRGPF50
OCR Text ...--V IC = 51A See Fig. 2, 5 ---2.4 ---IC = 28A, T J = 150C 3.0 ---5.5 VCE = VGE, IC = 250A ---- -9.7 ---- mV/C VCE = VGE, IC = 250A 12 18 ---...720V 280 VGE = 15V, R G = 5.0 180 Energy losses include "tail" ------mJ See Fig. 9, 10, 11, 14 4.1 -...
Description 900V Discrete IGBT in a TO-3P (TO-247AC) package
INSULATED GATE BIPOLAR TRANSISTOR
From old datasheet system

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    STW6NC90Z 7247 STW6NC90

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STW6NC90Z 7247 STW6NC90
OCR Text ...0 900 25 5.2 3.3 21 160 1.52 50 4 3 -65 to 150 150 (*) Limited by maximum temperature allowed Unit V V V A A A W W/C mA KV V/ns C C (...720V, ID = 5 A, VGS = 10V Min. Typ. 24 8 40 9 15 56 Max. Unit ns ns nC nC nC SWITCHING OFF (INDUC...
Description N-CHANNEL 900V 2.1OHM 5.2A TO-247 ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 900V 2.1OHM 5.2A TO-247 ZENER-PROTECTED POWERMESH III MOSFET
From old datasheet system
N-CHANNEL MOSFET
N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH⑩III MOSFET N沟道900V - 2.1ohm - 5.2A47齐纳保护PowerMESH⑩三MOSFET

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    SSH8N90A

Fairchild Semiconductor Corporation
Part No. SSH8N90A
OCR Text ... C VGS=10V,ID=4A VDS=50V,ID=4A 4 O* 4 O 2070 2690 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=450V,ID=8A, RG=10 See Fig 13 VDS=720V,VGS=10V, ID=8A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol I...
Description Advanced Power MOSFET

File Size 251.66K  /  7 Page

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    IRF
Part No. G4PH40KD
OCR Text ...lel diodes  latest generation 4 igbt's offer highest power density motor controls possible  hexfred tm diodes optimized for perfor...720v, t j = 125 c v ge = 15v, r g = 10 ? , v cpk < 500v t d(on) turn-on delay time ? 49 ? t j ...
Description IRG4PH40KD

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    Advanced Power Electron...
Part No. AP09N90W-HF
OCR Text ...on-resistance 3 v gs =10v, i d =4.5a - - 1.2 ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance...720v, v gs =0v - - 100 ua drain-source leakage current (t j =125 o c) v ds =720v , v gs =0v - - 500...
Description Fast Switching Characteristic

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    HGTG20N120C3D G20N120

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGTG20N120C3D G20N120
OCR Text ...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,466,176 4,587,713 4,620,211 4,641,162 4,694,313 4,794,432 4,809,047 4,860,080 4,901,127 4,969,02...720V, TJ = 125oC, RGE = 3. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Sp...
Description 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 45 A, 1200 V, N-CHANNEL IGBT, TO-247
45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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    HFS6N90

SemiHow Co.,Ltd.
Part No. HFS6N90
OCR Text ... (note 3) 4.5 v/ns p d power dissipation (t c = 25 ) - derate above 25 56 w 0.48 w/ t j , t stg operating and storag...720v, i d = 6.0 a, v gs = 10 v (note 4,5) -- 35 45 nc q gs gate - source charge -- 10 -- nc q gd gat...
Description 900V N-Channel MOSFET

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    2SK3532 2SK3532-01MR

FUJI[Fuji Electric]
Part No. 2SK3532 2SK3532-01MR
OCR Text ...50A/s, Vcc < BVDSS, Tch < 150C *4 VDS< 900V *5 VGS=-30V *6 t=60sec, f=60Hz = = = = Item Drain-source voltage Symbol VDS VDSX *5 ID ID(puls] ...720V VGS=0V Tch=125C VGS=30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=3A...
Description    N-CHANNEL SILICON POWER MOSFET
N Channel Silicon Power MOSFET

File Size 110.69K  /  4 Page

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