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3.0a Datasheet PDF File

For 3.0a Found Datasheets File :: 9866 Search Time::1.234ms
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				Advanced Power Electronics Corp.
Part No.	AP9974BGP
OCR Text	...ransconductance v ds =10v, i d =30a - 50 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 25 ua drain-source leakage current (t j =125 o c) v ds =48v ,v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	90.18K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	MBRB2535CTPBF
OCR Text	...V V mA mA V m Conditions @ 30A @ 30A TJ = 25 C TJ = 125 C TJ = TJ max. TJ = 25 C TJ = 125 C Rated DC voltage pF nH VR = 5VDC (test signal range 100Khz to 1Mhz) 25C Measured from top of terminal to mounting plane (1) Pulse Wi...
Description	SCHOTTKY RECTIFIER
File Size	250.42K / 7 Page	View it Online	Download Datasheet

				Broadband TelCom Power, Inc.
Part No.	HB150-48-05 HB150-48-05N HB150-48-12 HB150-48-12N HB150-48-15 HB150-48-15N HB150-48-24 HB150-48-24N HB150-48-33 HB150-48-33N
OCR Text	...ts In Power Conversion Up to 30A Low Cost Half Bricks The HB series of low cost DC/DC converters offer the different current levels and are comparable to existing quarter-bricks. With a wide input voltage range of 36-75V they are avai...
Description	Up to 30A Low Cost Half Bricks
File Size	114.12K / 2 Page	View it Online	Download Datasheet

				Sirectifier Semiconductors
Part No.	HUR1520S HUR1530S
OCR Text	... 500 TVJ = 100C nC 400 IRM IF = 30A IF = 15A IF = 7.5A 10 15 VR = 150V A 20 TVJ = 100C VR = 150V IF = 30A IF = 15A IF = 7.5A 0 0 1 VF V 2 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt Fig. 1 Forward current IF ve...
Description	High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
File Size	236.65K / 3 Page	View it Online	Download Datasheet

				Sirectifier Semiconductors
Part No.	HUR3030
OCR Text	...; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 250 1 0.91 1.25 0.9 0.25 Unit uA mA V K/W ns IR VF RthJC RthCH trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC VR=100V; I...
Description	High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
File Size	242.04K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGIB15B60KD1P IRGIB15B60KD1P-15
OCR Text	...6 14 ICE = 7.5A ICE = 15A ICE = 30A 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 7.5A ICE = 15A ICE = 30A 12 10 8 6 4 2 0 Fig. 9 - Typical VCE vs. VGE TJ = -40C Fig. 10 - Typical VCE vs. VGE TJ = 25C 20 18 16 14 ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	376.30K / 13 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP60U03GH
OCR Text	...ransconductance v ds =10v, i d =30a - 28 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =30a - 13 21 nc q gs gate-source charge v ds =24v - 2.2 ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance, Simple Drive Requirement
File Size	121.35K / 5 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	...teristic / Test Conditions IF = 30A VF Maximum Forward Voltage IF = 60A IF = 30A, TJ = 150C 050-5558 Rev A MIN TYP MAX UNIT 1.8 1.5 1.6 250 500 40 A pF Volts IRM CT Maximum Reverse Leakage Current VR = VR Rated VR ...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	...teristic / Test Conditions IF = 30A VF Maximum Forward Voltage IF = 60A IF = 30A, TJ = 150C 050-5559 Rev A MIN TYP MAX UNIT 1.8 1.5 1.6 250 500 40 A pF Volts IRM CT Maximum Reverse Leakage Current VR = VR Rated VR ...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP85U03GH
OCR Text	...uA VGS=10V, ID=40A VGS=4.5V, ID=30A Min. 30 1 - Typ. 27.5 29 6.4 19 10 84 27 83 395 390 1.2 Max. Units 5.5 12 3 1 +100 46 1.8 V m m V S uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf C...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	147.53K / 5 Page	View it Online	Download Datasheet

For 3.0a Found Datasheets File :: 9866 Search Time::1.234ms
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