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  227b Datasheet PDF File

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    IXFN26N100P

IXYS Corporation
Part No. IXFN26N100P
OCR Text ...s ns ns ns nC nC nC C/W C/W SOT-227b Outline Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 13A, -di/dt = 100A/s VR = 100V ...
Description Polar Power MOSFET HiPerFET

File Size 105.22K  /  4 Page

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    IXFN26N120P

IXYS Corporation
Part No. IXFN26N120P
OCR Text ...ns ns nC nC nC 0.18 C/W C/W SOT-227b Outline Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 13A RG = 1 (External) 55 76 58 225 87 98 Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS =...
Description Polar Power MOSFET

File Size 104.68K  /  4 Page

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    IXFN36N110P

IXYS Corporation
Part No. IXFN36N110P
OCR Text ...s ns nC nC nC 0.125 C/W C/W SOT-227b Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20A, -di/...
Description Polar Power MOSFET HiPerFET

File Size 106.00K  /  4 Page

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    IXFN82N60P

IXYS Corporation
Part No. IXFN82N60P
OCR Text ...C nC nC 0.12 C/W 0.13 C/W SOT-227b Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS = 20 V; ID = IT, Note 1 Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Notes: Test Conditions VGS = 0 V Repetitiv...
Description PolarHV HiPerFET Power MOSFET

File Size 144.65K  /  5 Page

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    HGT1N30N60A4D

Fairchild Semiconductor
Part No. HGT1N30N60A4D
OCR Text ...E Packaging JEDEC STYLE SOT-227b GATE EMITTER NOTE: When ordering, use the entire part number. TAB (ISOLATED) COLLECTOR EMITTER Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4...
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE

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    IXFE180N20

IXYS Corporation
Part No. IXFE180N20
OCR Text ... ns features ? conforms to sot-227b outline  low r ds (on) hdmos tm process  rugged polysilicon gate cell structure  unclamped inductive switching (uis) rated  low package inductance  fast intrinsic rectifier  encapsulating epox...
Description HiPerFET Power MOSFETs Single Die MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 516.46K  /  2 Page

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    IXYS
Part No. IXFE24N100 IXFE23N100
OCR Text ...heet features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc co...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 651.54K  /  2 Page

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    IXYS
Part No. IXFE36N100 IXFE34N100
OCR Text ...heet features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc co...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 651.51K  /  2 Page

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    IXFE39N90

IXYS Corporation
Part No. IXFE39N90
OCR Text ...< ns features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc co...
Description HiPerFET Power MOSFETs Single Die MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 113.58K  /  2 Page

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    IXYS
Part No. IXFE44N50Q IXFE48N50Q
OCR Text ...0 ns features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc co...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 549.94K  /  4 Page

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