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INTERSIL[Intersil Corporation]
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| Part No. |
FSYA9150R FSYA9150D FN4582 FSYA9150R4 FSYA9150D1 FSYA9150D3 FSYA9150R1 FSYA9150R3
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 1... |
| Description |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
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| File Size |
55.68K /
8 Page |
 View
it Online |
Download Datasheet
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSYA250R FSYA250D FSYA250R1 FN4313 FSYA250R4 FSYA250D1 FSYA250D3 FSYA250R3
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V... |
| Description |
27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 27 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
45.54K /
8 Page |
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it Online |
Download Datasheet |
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International Rectifier, Corp.
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| Part No. |
IRKDL132
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| OCR Text |
...ncy characteristics 1e2 1e3 1e4 1e5 1e11e21e31e 4 50 h z 400 1000 200 1500 2500 5000 peak forward current (a) pulse basewidth ( s) irk.l132.. series trapezoidal pulse t = 60 c c tp 1e4 1e2 1e3 1e4 1e5 1e1 1e2 1e3 1e 4 50 h z 400 1000... |
| Description |
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| File Size |
117.61K /
7 Page |
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it Online |
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MagnaChip
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| Part No. |
MDP7N60B
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| OCR Text |
... 1e5 1e4 1e3 0.01 0.1 1 10 0 3000 6000 9000 12000 15000 singlepulse r thjc =0.95 /w t c =25 power(w) pulsewidth(s) 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 i d ,draincurrent[a] t c ,casetemperature[ ] 1e5 ... |
| Description |
N-Channel MOSFET
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| File Size |
1,136.82K /
8 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYA450D FSYA450D1 FSYA450D3 FSYA450R4 FSYA450R1 FSYA450R3
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE =... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 11 A, 500 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
55.83K /
8 Page |
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it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7410 FN4500
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| OCR Text |
...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) -20... |
| Description |
3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3.5A 100V 0.600 Ohm Rad Hard N-Channel Power MOSFET
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
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| File Size |
44.85K /
8 Page |
View
it Online |
Download Datasheet |
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PanJit International, Inc.
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| Part No. |
FSPJ164F3
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| OCR Text |
...labs or texas a&m. 5. fluence = 1e5 ions/cm 2 (typical), t = 25 o c. 6. ion species: let = 37, br or kr ; let = 60, i or xe; let = 82, au. 7. does not exhibit single event burnout (s eb) or single event gate rupture (segr). performance cur... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 68A I(D) | TO-254AA 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 68A条（丁）|54AA
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| File Size |
105.02K /
7 Page |
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it Online |
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