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For 16 777 216-word Found Datasheets File :: 435 Search Time::1.843ms
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				ALSC[Alliance Semiconductor Corporation]
Part No.	AS4C1M16E5-50JC AS4C1M16E5-60JC AS4C1M16E5-60JI AS4C1M16E5-60TC AS4C1M16E5-60TI AS4C1M16E5-50TI AS4C1M16E5 AS4C1M16E5-45JC AS4C1M16E5-45TC AS4C1M16E5-50JI AS4C1M16E5-50TC
OCR Text	16 bits * High speed - 45/50/60 ns RAS access time - 20/20/25 ns hyper page cycle time - 10/12/15 ns CAS access time * 1024 refresh cycl...777,216) Substrate bias generator Recommended operating conditions Parameter Supply voltage Inpu...
Description	5V 1M x 16 CMOS DRAM (EDO) 5V 1M】16 CMOS DRAM (EDO) 5V 1M16 CMOS DRAM (EDO)
File Size	456.96K / 22 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16D64AKQC-75 MH16D64AKQC-10
OCR Text	...AKQC-75,-10 1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module DESCRIPTION The MH16D64AKQC is 16777216 - word x 64-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module. This consists of 8 indus...
Description	1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
File Size	325.97K / 37 Page	View it Online	Download Datasheet

				FUJITSU[Fujitsu Media Devices Limited]
Part No.	MB82D01171A MB82D01171A-80 MB82D01171A-80L MB82D01171A-80LL MB82D01171A-80LLPBN MB82D01171A-80LLPBT MB82D01171A-80LPBN MB82D01171A-80LPBT MB82D01171A-80PBN MB82D01171A-80PBT MB82D01171A-85 MB82D01171A-85L MB82D01171A-85LL MB82D01171A-85LLPBN MB82D01171A-85LLPBT MB82D01171A-85LPBN MB82D01171A-85LPBT MB82D01171A-85PBN MB82D01171A-85PBT MB82D01171A-90PBT MB82D01171A-90 MB82D01171A-90L MB82D01171A-90LL MB82D01171A-90LLPBN MB82D01171A-90LLPBT MB82D01171A-90LPBN MB82D01171A-90LPBT MB82D01171A-90PBN
OCR Text	16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory MB82D01171A-80/80L/80LL/85/85L/85LL/90/90L/90LL CMOS 1,048,576-W...777,216 storages accessible in a 16-bit format. This MB82D01171A is suited for low power application...
Description	16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory
File Size	128.14K / 27 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M2S56D40ATP-75A M2S56D30ATP-10 M2S56D30ATP-10L M2S56D30ATP-75 M2S56D30ATP-75A M2S56D30ATP-75AL M2S56D30ATP-75L M2V56D40ATP-75L M2S56D20AKT M2S56D20AKT-10 M2S56D20AKT-10L M2S56D20AKT-75 M2S56D20AKT-75A M2S56D20AKT-75AL M2S56D20AKT-75L M2S56D20ATP-10 M2S56D20ATP-10L M2S56D20ATP-75 M2S56D20ATP-75A M2S56D20ATP-75AL M2S56D20ATP-75L M2S56D30AKT M2S56D30AKT-10 M2S56D30AKT-10L M2S56D30AKT-75 M2S56D30AKT-75A M2S56D30AKT-75AL M2S56D30AKT-75L M2S56D40AKT M2S56D40AKT-10 M2S56D40AKT-10L M2S56D40AKT-75 M2S56D40AKT-75A M2S56D40AKT-75AL M2S56D40AKT-75L M2S56D40ATP-10 M2S56D40ATP-10L M2S56D40ATP-75 M2S56D40ATP-75AL M2S56D40ATP-75L M2V56D20AKT-10 M2V56D20AKT-10L M2V56D20AKT-75 M2V56D20AKT-75A M2V56D20AKT-75AL M2V56D20AKT-75L M2V56D20ATP-10 M2V56D20ATP-10L M2V56D20ATP-75 M2V56D20ATP-75A M2V56D20ATP-75AL M2V56D20ATP-75L M2V56D30AKT-10 M2V56D30AKT-10L M2V56D30AKT-75 M2V56D30AKT-75A M2V56D30AKT-75AL M2V56D30AKT-75L M2V56D30ATP-10 M2V56D30ATP-10L M2V56D30ATP-75 M2V56D30ATP-75A M2V56D30ATP-75AL M2V56D30ATP-75L M2V56D40AKT-10 M2V56D40AKT-10L M2V56D40AKT-75 M2V56D40AKT-75A M2V56D40AKT-75AL M2V56D40AKT-75L M2V56D40ATP-10 M2V56D40ATP-10L M2V56D40ATP-75 M2V56D40ATP-75A M2V56D40ATP-75AL M2S56D20ATP75A M2S56D30A
OCR Text	...TION M2S56D20AKT is a 4-bank x 16,777,216-word x 4-bit, M2S56D30AKT is a 4-bank x 8,388,608-word x 8-bit, M2S56D40AKT is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address ...
Description	256M Double Data Rate Synchronous DRAM
File Size	821.11K / 37 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M2S56D40ATP75A M2S56D40ATP-75 M2S56D40ATP-10 M2S56D40ATP
OCR Text	...TION M2S56D20ATP is a 4-bank x 16,777,216-word x 4-bit, M2S56D30ATP is a 4-bank x 8,388,608-word x 8-bit, M2S56D40ATP is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address ...
Description	256M Double Data Rate Synchronous DRAM
File Size	820.84K / 37 Page	View it Online	Download Datasheet

				NEC
Part No.	UPD23C128000BL UPD23C128000BLGX UPD23C128000BLGX-XXX UPD23C128000BLGY-MJH UPD23C128000BLGY-MKH UPD23C128000BLGY-XXX-MJH UPD23C128000BLGY-XXX-MKH
OCR Text	... 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) Description The PD23C128000BL is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 16,777,216 words by 8 bits, WORD mode : 8,388,608 words by...
Description	128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE)
File Size	247.25K / 20 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPD23C16040BLGX UPD23C16040BLGY-MJH UPD23C16040BL UPD23C16040BLGX-XXX UPD23C16040BLGY-MKH UPD23C16040BLGY-XXX-MKH UPD23C16040BLGY-XXX-MJH UPD23C16080BLGY-XXX-MKH UPD23C16080BL UPD23C16080BLGX UPD23C16080BLGX-XXX UPD23C16080BLGY-MJH UPD23C16080BLGY-MKH UPD23C16080BLGY-XXX-MJH
OCR Text	... 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The PD23C16040BL and PD23C16080BL are 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 2,097,152 words by 8 bits, WORD ...
Description	16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
File Size	360.81K / 24 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K8D1716U K8D1716UT K8D1716UB K8D1716UBB-TC07 K8D1716UBB K8D1716UBB-TC08 K8D1716UBB-TC09 K8D1716UTB-TC07 K8D1716UTB K8D1716UTB-TC08 K8D1716UTB-TC09 K8D1716UTB-YI09 K8D1716UBB-TI07 K8D1716UBB-TI08 K8D1716UBB-TI09 K8D1716UBB-YC07 K8D1716UBB-YC08 K8D1716UBB-YC09 K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09 K8D1716UTB-TI07 K8D1716UTB-TI08 K8D1716UTB-TI09 K8D1716UTB-YC07 K8D1716UTB-YC09 K8D1716UTB-YI07 K8D1716UTB-YI08 K8D1716UTB-YC08
OCR Text	...ions * Organization 1,048,576 x 16 bit (Word mode) * Fast Read Access Time : 70ns * Read While Program/Erase Operation * Dual Bank architect...777,216 bits) NOR-type Flash memory. The device features single voltage power supply operating withi...
Description	16M Dual Bank NOR Flash Memory 16M BIT (2M X8/1M X16) DUAL BANK NOR FLASH MEMORY
File Size	479.04K / 40 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	M5M29KE131BVP
OCR Text	...M5M29KE131BVP 134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package) DESCRIPTION The M5M29KE131BVP is a Stacked micro Multi Chip Package that contents 2 Dies of 6...
Description	Memory>NOR type Flash Memory 134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)
File Size	308.60K / 33 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC58FVB160A TC58FVB160AXB TC58FVB160AXB-10 TC58FVB160AXB-70 TC58FVT160AXB-70 TC58FVB160AFT TC58FVB160AFT-10 TC58FVB160AFT-70 TC58FVT160AFT TC58FVT160AFT-10 TC58FVT160AFT-70 TC58FVT160AXB
OCR Text	16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words x 8 bits or as 1,048,576 words x ...
Description	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	536.02K / 41 Page	View it Online	Download Datasheet

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