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  1019.7 Datasheet PDF File

For 1019.7 Found Datasheets File :: 694    Search Time::1.171ms    
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    CAT28F010TRI-70T CAT28F010N-90T CAT28F010P-15 CAT28F010N-20 CAT28F010PI-70 CAT28F010NI-70T CAT28F010N-12T CAT28F010P-90

Ironwood Electronics
NXP Semiconductors N.V.
Microchip Technology, Inc.
ON SEMICONDUCTOR
Part No. CAT28F010TRI-70T CAT28F010N-90T CAT28F010P-15 CAT28F010N-20 CAT28F010PI-70 CAT28F010NI-70T CAT28F010N-12T CAT28F010P-90 CAT28F010PA-90 CAT28F010PI-90 CAT28F010NI-90T CAT28F010NA-12T CAT28F010NI-12 CAT28F010NA-90T CAT28F010P-70 CAT28F010PA-70 CAT28F010TA-90T CAT28F010TI-90T CAT28F010TR-90T CAT28F010TRI-90T CAT28F010TRA-90T CAT28F010PI-15 CAT28F010TI-12T CAT28F010T-90T
OCR Text ...without notice 1 Doc. No. 1019, Rev. A CAT28F010 PIN CONFIGURATION DIP Package (P) VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18...
Description 128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32
1 Megabit CMOS Flash Memory(79.65 k) 1兆位的CMOS快闪记忆体(79.65十一
x8 Flash EEPROM x8闪存EEPROM

File Size 81.06K  /  14 Page

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    IRH93230 IRH9230

International Rectifier
Part No. IRH93230 IRH9230
OCR Text ...nt per mll-std-750, test method 1019. international rectifier has imposed a standard gate voltage of -12 volts per note 6 and a v dss bias condition equal to 80% of the device rated voltage per note 7. pre- and post-radiation limits of the...
Description -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package

File Size 60.46K  /  4 Page

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    5962F0151601QXA 5962F0151601QXC 5962F0151601QXX 5962F0151601QYA 5962F0151601QYX 5962F0151601QYC 5962F0151601VXA 5962F015

Aeroflex Circuit Technology
Part No. 5962F0151601QXA 5962F0151601QXC 5962F0151601QXX 5962F0151601QYA 5962F0151601QYX 5962F0151601QYC 5962F0151601VXA 5962F0151601VXX 5962F0151601VXC 5962F0151601VYA 5962F0151601VYC 5962G0151601QXA 5962F0151601VYX 5962G0151601QXC 5962G0151601QXX 5962G0151601QYA 5962G0151601QYC 5962G0151601QYX 5962G0151601VXA 5962G0151601VXC 5962G0151601VXX 5962G0151601VYA 5962G0151601VYC 5962G0151601VYX 5962H0151601QXA 5962H0151601QXC 5962H0151601QXX 5962H0151601QYA 5962H0151601QYC 5962H0151601QYX 5962R0151601QXA 5962R0151601QXC 5962R0151601QXX 5962R0151601QYA 5962R0151601QYC 5962R0151601QYX 5962R0151601VXA 5962H0151601VXA 5962H0151601VXX 5962H0151601VYA 5962H0151601VYC 5962H0151601VXC 5962R0151601VXC 5962R0151601VXX
OCR Text ... testing to mil-std-883, method 1019 - total dose: 1e6 rad(si) - let th (0.25) ~ 100 mev-cm 2 /mg - sel immune > 128 mev-cm 2 /...7:0) a(12:0) ce pe oe figure 1. prom block diagram 2 device operation the ut28f64lv has three cont...
Description Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 5E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 5E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 5E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 5E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 5E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 5E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 1E6 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 1E6 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 1E6 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 1E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 1E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 1E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 1E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 1E6 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 1E6 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 1E6 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 1E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 1E5 rads(Si).

File Size 78.31K  /  11 Page

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    IRHI7360SE

International Rectifier
Part No. IRHI7360SE
OCR Text ...nt per mll-std-750, test method 1019. international rectifier has imposed a standard gate voltage of 12 volts per note 6 and a v dss bias condition equal to 80% of the device rated voltage per note 7. pre- and post-radiation limits of the ...
Description Simple Drive Requirements
400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-259AA package

File Size 34.18K  /  4 Page

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    IRHI7460SE IRHI7460SE-15

International Rectifier
Part No. IRHI7460SE IRHI7460SE-15
OCR Text ...nt per mll-std-750, test method 1019. international rectifier has imposed a standard gate voltage of 12 volts per note 6 and a v dss bias condition equal to 80% of the device rated voltage per note 7. pre- and post-radiation limits of the ...
Description Simple Drive Requirements
500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-259AA package

File Size 34.37K  /  4 Page

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    Maxim Integrated Products, Inc.
Part No. UT6716470-WCA UT6716470-WCC UT6716455-WCC UT6716455-WCA UT6716455-PCC
OCR Text ... testing to mil-std-883 method 1019 - total-dose: 1.0e6 rads(si) - dose rate upset: 1.0e9 rads (si)/sec - dose rate survival: 1.0e12 rads (...7:0) column decoders write enable standard products ut67164 radiation-hardened 8k x 8 sram -- seu h...
Description 8K X 8 STANDARD SRAM, 55 ns, CDFP28
8K X 8 STANDARD SRAM, 55 ns, CDIP28
32 Mb (2M x 16, 4M x 8) MirrorBit, Flash Memory 静态存储器| 8KX8 |的CMOS | RAD数据通信硬|计划生育| 28脚|陶瓷
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory
64 Mb (4M x 16) Boot Sector, Flash Memory
SRAM|8KX8|CMOS| RAD HARD|FP|28PIN|CERAMIC

File Size 104.34K  /  15 Page

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    IRHY57133CMSE

International Rectifier
Part No. IRHY57133CMSE
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 104 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- TO-257AA PAD ASSIG...
Description RADIATION HARDENED POWER MOSFET
130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package

File Size 117.58K  /  8 Page

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    IRHE7110 IRHE8110

International Rectifier
Part No. IRHE7110 IRHE8110
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- LCC-18 IR WORLD HEA...
Description 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
RADIATION HARDENED POWER MOSFET

File Size 278.76K  /  12 Page

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    IRHF7110 IRHF8110 IRHF3110 IRHF4110 IRHF4110NBSP

IRF[International Rectifier]
Part No. IRHF7110 IRHF8110 IRHF3110 IRHF4110 IRHF4110NBSP
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions TO-205AF(Modified TO-39)...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE 抗辐射功率MOSFET的通孔
From old datasheet system
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package

File Size 449.22K  /  12 Page

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    IRHM7264SE JANSR2N7434

International Rectifier
Part No. IRHM7264SE JANSR2N7434
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions TO-254AA .12 ( .005 ) ...
Description RADIATION HARDENED POWER MOSFET

File Size 267.01K  /  8 Page

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