...nted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm )
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emit...
... Fall Time Symbol ICBO IEBO hFE(1) hFE(2) fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)160V, IE=0 VEB=(--)4...6 (0.45)0.56 (1.75)3.3 (0.25)0.4 Ratings min typ max (--)0.1 (--)0.1 60 35 (10)15 (280)140 1.5 (-0.3...
....90.3
4.60.2 2.90.2
3.20.1
13.70.2 4.20.2 Solder Dip
1.40.2 1.60.2 0.80.1
3.00.5
2.60.1
0.550.15
Absolute Maximum ...6 -10 -20 25 2.0 150 -55 to +150 C C Unit V V V A A W
1 2
2.540.30 5.080.50 3
1: Base 2: Coll...
...tion eith radial taping
2.50.1
Features
13.00.2
1.20.1 1.480.2
90
Power supply for audio & visual equipments such as TVs ...6 -3 -6 15 2.0 150 -55 to +150 C C Unit V V V A A W
1 : Base 2 : Collector 3 : Emitter MT-4-A1 Pa...
...BO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating -20 -20 -7 -1.5 -2.5 -150 2.0 1.0 150 -55 to 150 Unit V V V A mA W C C
JEDEC JEITA TOSH...6 mm thick, Cu area: 2 645 mm )
Weight: 0.05 g (typ.)
Electrical Characteristics (Ta = 25C)
C...
1) High speed switching. (Tf : Typ. : 20ns at IC = -3A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -2A, IB = -0.2A) 3) Stro...6 -3 -6 500 2.0 150 -55~+150 Unit V V V A A 1 mW W 2 C C
1 Pw=100ms 2 Mounted on a 40x40x0.7 (mm)...
Description
Power transistor (-60V, -3A) Power transistor (−60V −3A) Power transistor (−60V, −3A)
...n through the tape packing
3 1.50+0.25 -0.05 2.8+0.2 -0.3
1
2 (0.65)
Absolute Maximum Ratings Ta = 25C
Parameter Collector-bas...6 Typ Max Unit V V V pF MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD...
1) High speed switching. (Tf : Typ. : 60ns at IC = -500mA) 2) Low saturation voltage, typically (Typ. : -150mV at IC = -100mA, IB = -10mA) 3...6 -0.5 -1.0 200 150 -55 to 150 Unit V V V A A mW C C
1 2
Collector-base voltage Collector-emitte...
Description
Medium power transistor ( 60V/0.5A) Medium power transistor (−60V, −0.5A) Medium power transistor (-60V, -0.5A)