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  1.6 5.6 Datasheet PDF File

For 1.6 5.6 Found Datasheets File :: 518353    Search Time::5.703ms    
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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...nted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emit...
Description Silicon PNP Epitaxial Type

File Size 167.29K  /  5 Page

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ... Fall Time Symbol ICBO IEBO hFE(1) hFE(2) fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)160V, IE=0 VEB=(--)4...6 (0.45)0.56 (1.75)3.3 (0.25)0.4 Ratings min typ max (--)0.1 (--)0.1 60 35 (10)15 (280)140 1.5 (-0.3...
Description 140V / 10A, AF70W Output Applications

File Size 34.06K  /  4 Page

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ....90.3 4.60.2 2.90.2 3.20.1 13.70.2 4.20.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum ...6 -10 -20 25 2.0 150 -55 to +150 C C Unit V V V A A W 1 2 2.540.30 5.080.50 3 1: Base 2: Coll...
Description Silicon PNP epitaxial planar type

File Size 70.35K  /  3 Page

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ...tion eith radial taping 2.50.1 Features 13.00.2 1.20.1 1.480.2 90 Power supply for audio & visual equipments such as TVs ...6 -3 -6 15 2.0 150 -55 to +150 C C Unit V V V A A W 1 : Base 2 : Collector 3 : Emitter MT-4-A1 Pa...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...BO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating -20 -20 -7 -1.5 -2.5 -150 2.0 1.0 150 -55 to 150 Unit V V V A mA W C C JEDEC JEITA TOSH...6 mm thick, Cu area: 2 645 mm ) Weight: 0.05 g (typ.) Electrical Characteristics (Ta = 25C) C...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns (t...6 mm thick, Cu area: 2 645 mm ) Weight: 0.05 g (typ.) Electrical Characteristics (Ta = 25C) C...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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    2SA2071

ROHM[Rohm]
Part No. 2SA2071
OCR Text 1) High speed switching. (Tf : Typ. : 20ns at IC = -3A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -2A, IB = -0.2A) 3) Stro...6 -3 -6 500 2.0 150 -55~+150 Unit V V V A A 1 mW W 2 C C 1 Pw=100ms 2 Mounted on a 40x40x0.7 (mm)...
Description Power transistor (-60V, -3A)
Power transistor (−60V −3A)
Power transistor (−60V, −3A)

File Size 42.30K  /  4 Page

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    2SA2084

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2084
OCR Text ...n through the tape packing 3 1.50+0.25 -0.05 2.8+0.2 -0.3 1 2 (0.65) Absolute Maximum Ratings Ta = 25C Parameter Collector-bas...6 Typ Max Unit V V V pF MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD...
Description Silicon PNP epitaxial planar type

File Size 67.26K  /  3 Page

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    2SA2087

ROHM[Rohm]
Part No. 2SA2087
OCR Text 1) High speed switching. (Tf : Typ. : 20ns at IC = -2A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -1.0A, IB = -100mA) 3) S...6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) (1) Emitter (2) Collector (3) Base ...
Description Power transistor

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    2SA2088

ROHM[Rohm]
Part No. 2SA2088
OCR Text 1) High speed switching. (Tf : Typ. : 60ns at IC = -500mA) 2) Low saturation voltage, typically (Typ. : -150mV at IC = -100mA, IB = -10mA) 3...6 -0.5 -1.0 200 150 -55 to 150 Unit V V V A A mW C C 1 2 Collector-base voltage Collector-emitte...
Description Medium power transistor ( 60V/0.5A)
Medium power transistor (−60V, −0.5A)
Medium power transistor (-60V, -0.5A)

File Size 81.84K  /  4 Page

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