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  0.216 Datasheet PDF File

For 0.216 Found Datasheets File :: 7950    Search Time::6.188ms    
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    PDTC114 PDTC114EE

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PDTC114 PDTC114EE
OCR Text ...collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 C IC ...216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Fl...
Description NPN resistor-equipped transistor

File Size 64.89K  /  8 Page

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    PDTC124XEF

PHILIPS[Philips Semiconductors]
Part No. PDTC124XEF
OCR Text ...collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 C IC ...216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Fl...
Description NPN resistor-equipped transistor

File Size 63.20K  /  8 Page

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    PDTC124XE

PHILIPS[Philips Semiconductors]
Part No. PDTC124XE
OCR Text ...collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 C IC ...216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Fl...
Description NPN resistor-equipped transistor

File Size 64.61K  /  8 Page

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    PDTC143TT

PHILIPS[Philips Semiconductors]
Part No. PDTC143TT
OCR Text ...collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 C IC ...216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Fl...
Description NPN resistor-equipped transistor

File Size 46.07K  /  8 Page

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    PDTC143XE

NXP Semiconductors
Philips Semiconductors
Part No. PDTC143XE
OCR Text ...tor capacitance CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 C IC = 0; VEB = 5 V IC = 10 mA; VCE = 5 V IC =...216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Fl...
Description NPN resistor-equipped transistor

File Size 49.92K  /  8 Page

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    PDTC143ZK

PHILIPS[Philips Semiconductors]
Part No. PDTC143ZK
OCR Text ...collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 C IC ...216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Fl...
Description NPN resistor-equipped transistor

File Size 49.89K  /  8 Page

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    PDTC143ZT

PHILIPS[Philips Semiconductors]
Part No. PDTC143ZT
OCR Text ...tor capacitance CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 C IC = 0; VEB = 5 V IC = 10 mA; VCE = 5 V IC =...216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Fl...
Description NPN resistor-equipped transistor

File Size 50.57K  /  8 Page

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    TE28F016B3B120 TE28F016B3B150 TE28F016B3T120 TE28F016B3T150 GT28F008B3B120 GT28F008B3B150 GT28F008B3T120 GT28F008B3T150

INTEL[Intel Corporation]
Part No. TE28F016B3B120 TE28F016B3B150 TE28F016B3T120 TE28F016B3T150 GT28F008B3B120 GT28F008B3B150 GT28F008B3T120 GT28F008B3T150 GT28F016B3B120 GT28F016B3B150 GT28F016B3T120 GT28F016B3T150 TE28F008B3B120 TE28F008B3B150 TE28F008B3T120 TE28F008B3T150 28F008B3
OCR Text ...and 8-Mbit Boot Block ETOXTM V (0.4 ) Flash Technology x8-Only Input/Output Architecture For Space-Constrained 8-bit Applications n n n ...216-bit) flash memory organized as 2 Mbytes of 8 bits each. For word-wide devices (x16) see the Smar...
Description SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

File Size 378.37K  /  49 Page

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    DS1270AB DS1270AB-100 DS1270AB-100IND DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-100IND DS1270Y-70 DS1270Y-7

DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
Part No. DS1270AB DS1270AB-100 DS1270AB-100IND DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-100IND DS1270Y-70 DS1270Y-70IND
OCR Text ...VCC falls below approximately 3.0 volts, a power switching circuit connects the lithium energy source to RAM to retain data. During power-up, when VCC rises above approximately 3.0 volts, the power switching circuit connects external VCC to...
Description (DS1270AB/Y) 16M Nonvolatile SRAM

File Size 164.69K  /  8 Page

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    DS1270W

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Dallas Semiconducotr
Part No. DS1270W
OCR Text ... Range Soldering Temperature * -0.3V to +4.6V 0C to 70C (-40C to +85C for IND parts) -40C to +70C (-40C to +85C for IND parts) +260C for 10 seconds This is a stress rating only and functional operation of the device at these or any other...
Description 3.3V 16Mb Nonvolatile SRAM

File Size 153.45K  /  8 Page

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