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  -2.6a Datasheet PDF File

For -2.6a Found Datasheets File :: 711    Search Time::1.203ms    
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    IRF[International Rectifier]
Part No. IRHMJ8250 IRHMJ3250 IRHMJ4250 IRHMJ7250
OCR Text ... RDS(on) 0.10 0.10 0.10 0.10 ID 26A 26A 26A 26A TO-254AA Tabless International Rectifier's RADHard HEXFET(R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven perfor...
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

File Size 327.23K  /  12 Page

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    IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL

International Rectifier, Corp.
Fairchild Semiconductor
IRF[International Rectifier]
Part No. IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL
OCR Text ...ID = 1mA 0.054 VGS = 10V, ID = 26A 5.0 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(o...
Description Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|4A(丁)|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)

File Size 132.03K  /  11 Page

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    APTC90H12SCTG

Microsemi Corporation
Part No. APTC90H12SCTG
OCR Text ...nit A m V nA VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charg...
Description Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module

File Size 209.85K  /  6 Page

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    APTC90H12T1G

Microsemi Corporation
Part No. APTC90H12T1G
OCR Text ...nit A m V nA VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charg...
Description Full - Bridge Super Junction MOSFET Power Module

File Size 202.62K  /  5 Page

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    IXFB52N90P

IXYS Corporation
Part No. IXFB52N90P
OCR Text ... IF = IS, VGS = 0V, Note 1 IF = 26A, -di/dt = 100A/s VR = 100V Characteristic Values Min. Typ. Max. 52 208 1.5 300 1.8 26 A A V ns C A Note 1: Pulse Test, t 300s; Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test C...
Description Polar Power MOSFET HiPerFET
52 A, 900 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 116.26K  /  4 Page

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    IRHE7110 IRHE8110

International Rectifier
Part No. IRHE7110 IRHE8110
OCR Text ...ons A V nS C Tj = 25C, IS = 26A, VGS = 0V Tj = 25C, IF = 26A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJ-PCB Junc...
Description 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
RADIATION HARDENED POWER MOSFET

File Size 278.76K  /  12 Page

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    MT18VDDF12872HY-335XX MT18VDDF12872HG-265 MT18VDDF12872HG-26A MT18VDDF12872HG-335 MT18VDDF12872HG-40B

Micron Technology
Part No. MT18VDDF12872HY-335XX MT18VDDF12872HG-265 MT18VDDF12872HG-26A MT18VDDF12872HG-335 MT18VDDF12872HG-40B
OCR Text ... (133 mhz), 266 mt/s, cl = 2 2 -26a ? 7.5ns (133 mhz), 266 mt/s, cl = 2.5 2 -265 p c b hei g ht: 31.75mm (1.25in) table 1: key timing parameters speed grade industry nomenclature data rate (mt/s) t rcd (ns) t rp (ns) t rc (ns) cl = 3 cl ...
Description 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
DDR SDRAM SODIMM

File Size 195.46K  /  10 Page

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    IRF[International Rectifier]
Part No. IRF6691
OCR Text ... 12V VGS = -12V VDS = 10V, ID = 26A VDS = 10V VGS = 4.5V ID = 17A See Fig. 17 VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5VAe mV/C ID = 10mA, reference to 25C ns ID = 26A Clamped Inductive Load VGS = 0V VDS = 10V = 1.0MHz Max. 230 26 ...
Description HEXFET Power MOSFET plus Schottky Diode

File Size 226.24K  /  10 Page

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    IRHM8150 IRHM7150 IRHM4150 JANSF2N7268 JANSG2N7268 JANSH2N7268 IRHM3150 JANSR2N7268

IRF[International Rectifier]
Part No. IRHM8150 IRHM7150 IRHM4150 JANSF2N7268 JANSG2N7268 JANSH2N7268 IRHM3150 JANSR2N7268
OCR Text ... 1 s Duty Factor 0.1 % Fig 26a. Switching Time Test Circuit VDS 90% Fig 25. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 26b. Switching Time Waveforms Fig 27. Maximum Effective Transient Th...
Description 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package

File Size 441.47K  /  12 Page

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