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tri-directional Datasheet PDF File

For tri-directional Found Datasheets File :: 2254 Search Time::3.172ms
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				ATMEL[ATMEL Corporation]
Part No.	ATTINY28L ATTINY28L-4AC ATTINY28L-4AI ATTINY28L-4MC ATTINY28L-4MI ATTINY28L-4PC ATTINY28L-4PI ATTINY28V ATTINY28V-1AC ATTINY28V-1AI ATTINY28V-1MC ATTINY28V-1MI ATTINY28V-1PC ATTINY28V-1PI
OCR Text	...lly disabled. The port pins are tri-stated when a reset condition becomes active, even if the clock is not running. Port D (PD7..PD0) Port D is an 8-bit I/O port. Port pins can provide internal pull-up resistors (selected for each bit). The...
Description	8-bit AVR Microcontroller with 2K Bytes of Flash
File Size	534.49K / 75 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4S641632F-TC60 K4S641632F-TC75 K4S641632F-TL75 K4S641632F K4S641632F-TC1H K4S641632F-TC1L K4S641632F-TC50 K4S641632F-TC55 K4S641632F-TL1H K4S641632F-TL1L K4S641632F-TL50 K4S641632F-TL60
OCR Text	...all bi-directional buffers with Tri-State outputs. 4. The VDD condition of K4S641632F-55/60 is 3.135V~3.6V. CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VREF =1.4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min 2.5 2.5 2.5 4.0 Max ...
Description	RF CONNECTOR; FME PLUG, CRIMP ATTACHMENT FOR RG58 RF CONNECTOR; 75 OHM MCX JACK, SURFACE MOUNT Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
File Size	132.29K / 11 Page	View it Online	Download Datasheet

				Samsung semiconductor Samsung Electronic
Part No.	K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
OCR Text	...all bi-directional buffers with Tri-State outputs. CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VREF =1.4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min 2.5 2.5 2.5 4.0 Max 4.0 5.0 5.0 6.5 Unit pF pF pF pF Note 1 2 2 3 RAS, CAS...
Description	64Mb H-die SDRAM Specification
File Size	142.04K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL60 K4S643232C-TL80 K4S643232C-TC_L10 K4S643232C-TC_L55 K4S643232C-TC_L60 K4S643232C-TC_L70 K4S643232C-TC_L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80
OCR Text	...all bi-directional buffers with Tri-State outputs. 4. The VDD condition of K4S643232C-55/60 is 3.135V~3.6V. DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70C) Parameter Symbol Test Condition Burst...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
File Size	1,151.85K / 43 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
OCR Text	...all bi-directional buffers with Tri-State outputs. 4. The VDD condition of K4S643232E-45/50/55/60 is 3.135V ~ 3.6V CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VREF = 1.4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min Max 4 4.5 4....
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL 512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
File Size	100.95K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E
OCR Text	...all bi-directional buffers with Tri-State outputs. 4. The VDD condition of K4S643232E-60 is 3.135V ~ 3.6V CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VREF = 1.4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min Max 4 4.5 4.5 6.5 Uni...
Description	LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3 LED ORANGE DIFFUSED 2X5 RECT CONNECTOR ACCESSORY LED ORG/RED DIFFUSED 2X5MM RECT -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
File Size	99.80K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S643232E-TI60 K4S643232E-TI70
OCR Text	...all bi-directional buffers with Tri-State outputs. 4. The VDD condition of K4S643232E-60 is 3.135V ~ 3.6V CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VREF = 1.4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min Max 4 4.5 4.5 6.5 Uni...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY IR LED 880NM 40 DEG SIDE VIEW
File Size	98.65K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4S643232F-TC70 K4S643232F-TC60 K4S643232F K4S643232F-TC45 K4S643232F-TC50 K4S643232F-TC55 K4S643232F-TL50 K4S643232F-TL60
OCR Text	...all bi-directional buffers with Tri-State outputs. 4. The VDD condition of K4S643232F-45/50/55/60 is 3.135V ~ 3.6V CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VREF = 1.4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min Max 4 4.5 4....
Description	IR LED 950NM 18 DEG DOUBLE END 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
File Size	100.27K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70
OCR Text	...all bi-directional buffers with Tri-State outputs. 4. The VDD condition of K4S643232F-60 is 3.135V ~ 3.6V CAPACITANCE Clock (VDD = 3.3V, TA = 23C, f = 1MHz, VREF = 1.4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min Max 4 4.5 4.5 6.5 Uni...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V CONNECTOR ACCESSORY 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
File Size	98.11K / 12 Page	View it Online	Download Datasheet

				SIMTEK ETC[ETC]
Part No.	STK17TA8 STK17TA8-R STK17TA8-R25 STK17TA8-R25I STK17TA8-R35 STK17TA8-R35I STK17TA8-R45 STK17TA8-R45I STK17TA8-RF25 STK17TA8-RF25I STK17TA8-RF35 STK17TA8-RF35I STK17TA8-RF45 STK17TA8-RF45I STK17TA8-W25 STK17TA8-W25I STK17TA8-W35 STK17TA8-W35I STK17TA8-W45 STK17TA8-W45I STK17TA8-WF25 STK17TA8-WF25I STK17TA8-WF35 STK17TA8-WF35I STK17TA8-WF45 STK17TA8-WF45I
OCR Text	...ng G high causes the DQ pins to tri-state. Crystal: Connections for 32.768 kHz crystal. Capacitor supplied backup RTC supply voltage. Battery supplied backup RTC supply voltage. Power (+ 3V) Hardware Store Busy (I/O) Interrupt Output: Can b...
Description	nvTime Event Data Recorder 128K x 8 AutoStore nvSRAM with Real-Time Clock Product Preview nvTime⑩ Event Data Recorder 128K x 8 AutoStore⑩ nvSRAM with Real-Time Clock Product Preview
File Size	369.28K / 22 Page	View it Online	Download Datasheet

For tri-directional Found Datasheets File :: 2254 Search Time::3.172ms
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