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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT40G121
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Description |
Insulated Gate Bipolar transistor Silicon N Channel igbt The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate Bipolar transistor Silicon N Channel igbt
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File Size |
139.45K /
5 Page |
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it Online |
Download Datasheet
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Part No. |
MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK1 MG150H2DL1 MG400J1US1 MG150H2CL1 MG150H2YL1
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Description |
50 A, 1200 V, N-CHANNEL igbt 100 A, 880 V, 2 CHANNEL, NPN, Si, POWER transistor 200 A, 550 V, 2 CHANNEL, NPN, Si, POWER transistor 150 A, 550 V, 2 CHANNEL, NPN, Si, POWER transistor 400 A, 600 V, N-CHANNEL igbt
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File Size |
47.52K /
1 Page |
View
it Online |
Download Datasheet
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Price and Availability
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