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  stanson Datasheet PDF File

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    ST3422A

stanson Technology
Part No. ST3422A
Description The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

File Size 333.39K  /  6 Page

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    ST3406SRG

stanson Technology
Part No. ST3406SRG
Description ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 320.76K  /  6 Page

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    ST3401SRG

stanson Technology
Part No. ST3401SRG
Description ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

File Size 205.73K  /  6 Page

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    ST7400

stanson Technology
Part No. ST7400
Description ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 384.85K  /  8 Page

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    STP4931

stanson Technology
Part No. STP4931
Description STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

File Size 328.89K  /  6 Page

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    STP4925

stanson Technology
Part No. STP4925
Description STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 569.13K  /  6 Page

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    STN4822

stanson Technology
Part No. STN4822
Description STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

File Size 510.78K  /  6 Page

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    STN4416

stanson Technology
Part No. STN4416
Description STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 960.98K  /  6 Page

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    STN4438

stanson Technology
Part No. STN4438
Description STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 264.31K  /  6 Page

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    ST25N10

stanson Technology
Part No. ST25N10
Description    TO-252 package design

File Size 860.93K  /  6 Page

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