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silicon-nitride Datasheet PDF File

For silicon-nitride Found Datasheets File :: 1826 Search Time::17.234ms
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				NEC[NEC]
Part No.	UPB1005GS UPB1005GS-E1 UPB1003GS UPB1004GS UPC2753GR UPC2756T UPC2756TB
OCR Text	... DESCRIPTION The PB1005GS is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block in...nitride passivation film and gold electrodes. These materials can protect the chip surface from poll...
Description	REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER
File Size	161.58K / 20 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp.
Part No.	UPB1502GR UPB1502GR1 UPB1502GR1-E1 UPB1502GR-E1
OCR Text	...ing NEC's 20 GHz fT NESATTM III silicon bipolar process. This process uses silicon nitride passivation film and gold metallization wirings. These materials can protect the chips from external pollution and prevent corrosion and migration. T...
Description	1.7 GHz/ 2.0 GHz LOW-POWER TWO-MODULUS PRESCALER DIVIDED-BY-64/65, 128/129 1.7千兆 2.0 GHz的低功耗双分频DIVIDED-BY-64/65，一百二十九分之一百二十八 1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 2.0GHz 定标
File Size	162.77K / 16 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPB1506 UPB1506GV UPB1506GV-E1 UPB1507GV UPB1507GV-E1 UPB588G UPB586G UPB1505GR
OCR Text	...re 3.0 GHz input, high division silicon prescaler ICs for analog DBS tuner applications. These ICs divide-by-256, 128 and 64 contribute to p...nitride passivation film and gold electrodes. These materials can protect chip surface from external...
Description	3GHz INPUT DIVIDE BY 256 128 64 PRESCALER IC FOR ANALOG DBS TUNERS 3GHz INPUT DIVIDE BY 256, 128, 64 PRESCALER IC FOR ANALOG DBS TUNERS
File Size	141.27K / 20 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	UPB581A UPB581C UPB584G UPB1508GV UPB1508GV-E1
OCR Text	... using NEC's high fT NESATTM IV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this I...
Description	ER 3C 3#12 PIN RECP 3 GHz INPUT DIVIDE BY 2 PRESCALER IC FOR DBS TUNERS
File Size	73.62K / 12 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	UPB585G UPB1510 UPB1510GV UPB1510GV-E1
OCR Text	... using NEC's high fT NESATTM IV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC...
Description	3 GHz INPUT DIVIDE BY 4 PRESCALER IC FOR DBS TUNERS 3 GHz Input Divided By 4 Prescale(3 GHz 定标
File Size	136.97K / 12 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	UPB586G UPB588G UPB1505 UPB1505GR UPB1505GR-E1
OCR Text	...R DESCRIPTION PB1505GR is a silicon prescaler IC operating up to 3.0 GHz and divided by 256, 128, 64. Due to 3.0 GHz operation and high...nitride passivation film and gold electrodes. These materials can protect the chips from external po...
Description	3.0 GHz PRESCALER DIVIDED BY 256, 128, 64 FOR BS/CS TUNER 3.0 GHz PRESCALER DIVIDED BY 256, 128, 64 FOR BS/CS TUNER 3.0 GHz的预分频器分裂学士学位，256284 /政务司司长调谐器 3.0 GHz PRESCALER DIVIDED BY 256/ 128/ 64 FOR BS/CS TUNER
File Size	58.37K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	UPB587G UPB1509GV UPB1509GV-E1
OCR Text	... using NEC's high fT NESATTM IV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this I...
Description	1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS
File Size	115.55K / 16 Page	View it Online	Download Datasheet

				Motorola Inc Motorola, Inc
Part No.	TP3032
OCR Text	Silicon RF Power Transistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and dig...Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migrat...
Description	RF POWER TRANSISTOR NPN SILICON
File Size	117.97K / 4 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20003
OCR Text	...y at 4 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 12 10 8 6 4 2 0 0.00 Output Power (Watts) 200 03 LOT COD E VCC = 25 V ICQ = 50 mA f = 960 MHz 0.15 0.30 0.45 0.60 0.75 Input P...
Description	4 Watts, 915-960 MHz Cellular Radio RF Power Transistor
File Size	53.95K / 3 Page	View it Online	Download Datasheet

For silicon-nitride Found Datasheets File :: 1826 Search Time::17.234ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |