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Renesas
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| Part No. |
2SK3228
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| OCR Text |
...-drain diode reverse recovery t rr time Note: 1. Pulse test
2SK3228
Package Dimensions As of January, 2001
Unit: mm
11.5 MAX 2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08
+0.1
4.44 0.2 1.26 0.15
6.4
+0.2 -0.1
18.5 0.5
1... |
| Description |
Transistors>Switching/MOSFETs
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| File Size |
50.22K /
8 Page |
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it Online |
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Renesas
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| Part No. |
2SK3229
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| OCR Text |
...gd t d(on) tr t d(off) tf VDF t rr
2SK3229
Package Dimensions As of January, 2001
Unit: mm
10.0 0.3 3.2 0.2 4.5 0.3 2.7 0.2 15.0 0.3 2.5 0.2 0.7 0.1
Hitachi Code JEDEC EIAJ Mass (reference value)
0.6 0.1
2.54
2.54
... |
| Description |
Transistors>Switching/MOSFETs
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| File Size |
49.56K /
8 Page |
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Renesas
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| Part No. |
2SK1863
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| OCR Text |
...ss t d(on) tr t d(off) tf VDF t rr 1.5 -- -- -- -- -- -- -- -- -- -- 2.0 2.2 2.5 330 90 15 7 20 30 20 0.9 300 3.0 2.8 3.0 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 3 A, VGS = 0 I F = 3 A, VGS = 0, diF / dt = 100 A / s ... |
| Description |
Transistors>Switching/MOSFETs
|
| File Size |
57.14K /
9 Page |
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Renesas
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| Part No. |
2SK3069
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| OCR Text |
...gd t d(on) tr t d(off) tf VDF t rr
2SK3069
Main Characteristics
Power vs. Temperature Derating 200
Pch (W)
Maximum Safe Operation Area 1000
I D (A)
300 100 30 10 3 1 0.3
DC
150
PW
Channel Dissipation
100
Drain... |
| Description |
Transistors>Switching/MOSFETs
|
| File Size |
81.20K /
13 Page |
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it Online |
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Isahaya Electronics Corpora...
ISAHAYA[Isahaya Electronics Corporation]
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| Part No. |
MC2837
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| OCR Text |
...FORM IN DIODE
F
r
0.1 r rr
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Is...repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint... |
| Description |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE)
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| File Size |
128.82K /
3 Page |
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Renesas
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| Part No. |
2SK3140
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| OCR Text |
...gd t d(on) tr t d(off) tf VDF t rr
2SK3140
Main Characteristics
Power vs. Temperature Derating 40
Pch (W)
Maximum Safe Operation Area 1000
I D (A)
300 100 30 10 3 1 0.3
DC Op
30
PW
er ati
10
= 10
(T
10
0
s... |
| Description |
Transistors>Switching/MOSFETs
|
| File Size |
80.25K /
13 Page |
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Renesas
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| Part No. |
2SK3142
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| OCR Text |
...gd t d(on) tr t d(off) tf VDF t rr
2SK3142
Main Characteristics
Power vs. Temperature Derating 40 Pch (W) I D (A) 1000 300 100 30 10
DC
Maximum Safe Operation Area
10
PW
Op er
10
0
s
30
=
1
10 m
s
m
1
... |
| Description |
Transistors>Switching/MOSFETs
|
| File Size |
80.69K /
13 Page |
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Renesas
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| Part No. |
2SK3147L 2SK3147S
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| OCR Text |
...st t d(on) tr t d(off) tf VDF t rr
2SK3147(L),2SK3147(S)
Main Characteristics
Power vs. Temperature Derating 40
Pch (W) I D (A)
50 20 10 5
Maximum Safe Operation Area
10 s
0
30
10
PW
D C O
s
1 s m
0 =1
Ch... |
| Description |
Transistors>Switching/MOSFETs
|
| File Size |
95.30K /
15 Page |
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Renesas
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| Part No. |
2SK3148
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| OCR Text |
...st t d(on) tr t d(off) tf VDF t rr
2SK3148
Main Characteristics
Power vs. Temperature Derating 40 500
Maximum Safe Operation Area
Pch (W)
I D (A)
100 30 10 3 1 0.3
DC
30
PW
Op er
10
=1 0
10
0
s
1
m
... |
| Description |
Transistors>Switching/MOSFETs
|
| File Size |
82.81K /
13 Page |
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it Online |
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