|
|
|
Renesas Electronics Corporation |
Part No. |
D12350TE10IV
|
Description |
Microcontrollers for General Purpose System Control Applications (Non Promotion)
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
D12350TE20V
|
Description |
Microcontrollers for General Purpose System Control Applications (Non Promotion)
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
UPA2350T1P-E4-A
|
Description |
Nch Dual Power Mosfet 20V 6.0A 35Mohm 4-Pin Eflip-Lga
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
NX8350TS33-AZ
|
Description |
271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
D12350TE20IV
|
Description |
Microcontrollers for General Purpose System Control Applications (Non Promotion)
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
D12350TE13V
|
Description |
Microcontrollers for General Purpose System Control Applications (Non Promotion)
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
NX8350TS27-AZ
|
Description |
271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
NX8350TS29-AZ
|
Description |
271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
NX8350TS31-AZ
|
Description |
271 to 1331 nm AlGaInAs MQW-DFB Laser Diode for 40 G BASE-LR4 Application
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
UPA2350T1G-E4-A
|
Description |
N-Channel Mos Field Effect Transistor For Switching
|
Tech specs |
|
|
|
Official Product Page
|
|
Bom2Buy.com
Price and Availability
|