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  pulse Datasheet PDF File

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    SIHF740STRL-GE3

VISHAY SILICONIX
Part No. SIHF740STRL-GE3
OCR Text ...on. notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. v dd = 50 v, starting t j = 25 c, l = 9.1 mh, r g = 25 ? , i as = 10 a (see fig. 12). c. i sd ? 10a, di/dt ? 120 a/s, v dd ? ...
Description 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

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    2SA715

HITACHI[Hitachi Semiconductor]
Part No. 2SA715
OCR Text ...-0.5 A VCE = -2 V, IC = -1.5 A (pulse test) Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE* hFE Base to emitter voltage Collector to...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

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    SI2304BDS08

Vishay Siliconix
Part No. SI2304BDS08
OCR Text ...nted on fr4 board, t 5 s. b. pulse width limited by maximum junction temperature. c. surface mounted on fr4 board. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm absolute maximum ratings...
Description N-Channel 30-V (D-S) MOSFET

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Part No. MPG4364K
OCR Text ... i frm measurement condition : pulse width Q 1ms., duty Q 1/20. (ta=25 ) mb g mp g mp y ma y ma a mv r b r mp r power dissipation p d 70 70 85 85 70 75 100 75 mw f orward current i f 25 25 30 30 25 30 50 30 ma pulse forward current 1 ...
Description SINGLE COLOR LED, GREEN, 4 mm

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    2SA743 2SA743A

HITACHI[Hitachi Semiconductor]
Part No. 2SA743 2SA743A
OCR Text ...= -50 mA VCE = -4 V, IC = -1 A (pulse) VCE = -4 V, IC = -50 mA I C = -1 A, IB = -0.1 A VCE = -4 V, IC = -30 mA -0.65 -1.0 -0.75 -1.5 120 -- -0.65 1.0 -0.75 -1.5 120 -- Gain bandwidth product f T Note: B 60 to 120 1. The 2SA743 a...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

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Part No. MBRS140TRPBF
OCR Text ...tive 380 a 5s sine or 3s rect. pulse surge current 40 10ms sine or 6ms rect. pulse e as non- repetitive avalanche energy 3.0 mj t j = 25 c, i as = 1a, l = 6mh i ar repetitive avalanche current 1.0 a current decaying linearly to zer...
Description 1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AA

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Part No. K4E151611C-TC50
OCR Text ...5ns(3.3v), v cc +2.0v/20ns(5v), pulse width is measured at v cc *2 : -1.3v/15ns(3.3v), -2.0v/20ns(5v), pulse width is measured at v ss parameter symbol 3.3v 5v units min typ max min typ max supply voltage v cc 3.0 3.3 3.6 4.5 5.0 5.5 v ...
Description 1M X 16 EDO DRAM, 50 ns, PDSO44

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    VISHAY INTERTECHNOLOGY INC
Part No. FCSP240LTR
OCR Text ...ky barrier rectifier note (1) pulse width < 300 s, duty cycle < 2 % notes (1) thermal runaway condition for a diode on its own heatsink (2) mounted 1" square pcb absolute maximum ratings parameter symbol test conditions values units maxi...
Description 1.5 A, 40 V, SILICON, RECTIFIER DIODE

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