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  id-22a Datasheet PDF File

For id-22a Found Datasheets File :: 6150    Search Time::2.172ms    
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    TPC8107

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8107
OCR Text ... = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drai...
Description Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

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    TPC8108

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8108
OCR Text ... = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain...
Description Silicon P Channel MOS Type (U-MOSIII)

File Size 340.81K  /  7 Page

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    AOSMD[Alpha & Omega Semiconductors]
Part No. AO4612L AO4612
OCR Text ...atures n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56m (VGS=10V) < 77m (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 105m (VGS = -10V) < 135m (VGS = -4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 ...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 133.25K  /  7 Page

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    SEME-LAB[Seme LAB]
Part No. DMD5012-A DMD5012
OCR Text ...Hz to 500 MHz PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown V...2.4 15 65 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 125 Typ. Max. Unit V 3 1 ...
Description IMPROVED PERFORMANCE GOLD METALLISED SILICON DMOS RF FET 100W - 50V - 500MHz PUSH-PULL

File Size 58.14K  /  5 Page

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    HITACHI[Hitachi Semiconductor]
Part No. 4AK27
OCR Text ...ance R DS(on) 0.15, VGS = 10V, ID = 3.0A * 4V gate drive devices. * High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7...2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK27 Absolute Maximum Ratings (Ta = 25C) Item Drain to sour...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 51.99K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDD2512
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA=2...2) Test Conditions Single Pulse,VDD = 75 V, ID = 2.2A Min Typ Max Units 90 2.2 mJ A V ...
Description 150V N-Channel PowerTrench MOSFET

File Size 81.74K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDFC2P100
OCR Text ... rDS(on) = 150m at VGS = -4.5V, ID = -3.0A Max rDS(on) = 200m at VGS = -2.5V, ID = -2.2A Low Gate Charge (3.4nC typ) Compact industry standard SuperSOTTM-6 package General Description The FDFC2P100 combine the exceptional performance of...
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm

File Size 289.26K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDFS2P753Z
OCR Text ...x rDS(on) = 115m at VGS = -10V, ID = -3.0A Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5A VF < 500mV @ 1A VF < 580mV @ 2A Schottky and MOSFET...2 1 G S A A D6 SO-8 Pin 1 S A A G C7 C8 MOSFET Maximum Ratings TA = 25C unless o...
Description Integrated P-Channel PowerTrench? MOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode

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    IRF7380

International Rectifier
Part No. IRF7380
OCR Text ... RDS(on) max 73m@VGS = 10V ID 3.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Incl...2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ ...
Description 80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
High frequency DC-DC converters

File Size 503.95K  /  8 Page

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