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AOSMD[Alpha & Omega Semiconductors]
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Part No. |
AO4612L AO4612
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OCR Text |
...atures
n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56m (VGS=10V) < 77m (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 105m (VGS = -10V) < 135m (VGS = -4.5V)
D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D1
G2 S2
... |
Description |
Complementary Enhancement Mode Field Effect Transistor
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File Size |
133.25K /
7 Page |
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SEME-LAB[Seme LAB]
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Part No. |
DMD5012-A DMD5012
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OCR Text |
...Hz to 500 MHz
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side
Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown V...2.4 15 65 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 125
Typ.
Max. Unit
V 3 1 ... |
Description |
IMPROVED PERFORMANCE GOLD METALLISED SILICON DMOS RF FET 100W - 50V - 500MHz PUSH-PULL
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File Size |
58.14K /
5 Page |
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HITACHI[Hitachi Semiconductor]
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Part No. |
4AK27
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OCR Text |
...ance R DS(on) 0.15, VGS = 10V, ID = 3.0A * 4V gate drive devices. * High density mounting
Outline
SP-10
3 D 2G 4 G
5 D 6 G
7...2, 4, 6, 8. Gate 3, 5, 7, 9. Drain
4AK27
Absolute Maximum Ratings (Ta = 25C)
Item Drain to sour... |
Description |
Silicon N Channel MOS FET High Speed Power Switching
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File Size |
51.99K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDD2512
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OCR Text |
...imum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
TA=2...2)
Test Conditions
Single Pulse,VDD = 75 V, ID = 2.2A
Min
Typ
Max Units
90 2.2 mJ A V
... |
Description |
150V N-Channel PowerTrench MOSFET
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File Size |
81.74K /
5 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDFC2P100
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OCR Text |
... rDS(on) = 150m at VGS = -4.5V, ID = -3.0A Max rDS(on) = 200m at VGS = -2.5V, ID = -2.2A Low Gate Charge (3.4nC typ) Compact industry standard SuperSOTTM-6 package
General Description
The FDFC2P100 combine the exceptional performance of... |
Description |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm
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File Size |
289.26K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDFS2P753Z
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OCR Text |
...x rDS(on) = 115m at VGS = -10V, ID = -3.0A Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5A VF < 500mV @ 1A VF < 580mV @ 2A Schottky and MOSFET...2 1
G S A A
D6
SO-8
Pin 1
S A A
G
C7 C8
MOSFET Maximum Ratings TA = 25C unless o... |
Description |
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
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File Size |
330.13K /
7 Page |
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it Online |
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