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For enhancement-mode Found Datasheets File :: 25211    Search Time::3.703ms    
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    MSAFX20N60A

MICROSEMI[Microsemi Corporation]
Part No. MSAFX20N60A
OCR Text ...Volts 20 Amps 350 m N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features * * * * * * * Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface m...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 47.71K  /  2 Page

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    RFP70N03 RF1S70N03 RF1S70N03SM

FAIRCHILD[Fairchild Semiconductor]
Part No. RFP70N03 RF1S70N03 RF1S70N03SM
OCR Text enhancement-mode Power MOSFETs Packages JEDEC TO-220AB SOURCE DRAIN GATE December 1995 Features * 70A, 30V * rDS(ON) = 0.010 * Temperature Compensating PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve (Single Pu...
Description 70A/ 30V/ Avalanche Rated N-Channel enhancement-mode Power MOSFETs
70A, 30V, Avalanche Rated N-Channel enhancement-mode Power MOSFETs

File Size 588.19K  /  6 Page

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    RFP70N06 RFG70N06 RF1S70N06 RF1S70N06SM

FAIRCHILD[Fairchild Semiconductor]
Part No. RFP70N06 RFG70N06 RF1S70N06 RF1S70N06SM
OCR Text enhancement-mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE December 1995 Features * 70A, 60V * rDS(on) = 0.014 * Temperature Compensated PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve (Single...
Description 70A/ 60V/ Avalanche Rated/ N-Channel enhancement-mode Power MOSFETs
70A, 60V, Avalanche Rated, N-Channel enhancement-mode Power MOSFETs

File Size 90.34K  /  6 Page

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    SD210DE SST823 SST824 SD5001N SD5401CY SST215

LINEAR[Linear Integrated Systems]
Part No. SD210DE SST823 SST824 SD5001N SD5401CY SST215
OCR Text ...s. These switches are n-channel enhancement-mode silicon field effect transistors built using double-diffusion MOS (DMOS) silicon gate technology. Surfacemount versions (SST211, SD5400 Series) are also available. This family of devices is d...
Description Voltage Regulator IC; Package/Case:5-SOT-23; Output Current:150mA; Output Voltage:2.9V; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.9V RoHS Compliant: No
Voltage Regulator IC; Output Current:150mA; Output Voltage:2.8V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process
HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

File Size 353.61K  /  11 Page

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    SI9410DY

FAIRCHILD[Fairchild Semiconductor]
Part No. SI9410DY
OCR Text Enhancement Mode MOSFET General Description This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior swi...
Description Single N-Channel Enhancement Mode MOSFET

File Size 187.65K  /  3 Page

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    SI9420DY SI91860DY-T1 SI91860DY-T1-E3

VISAY[Vishay Siliconix]
Part No. SI9420DY SI91860DY-T1 SI91860DY-T1-E3
OCR Text enhancement-mode MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(ON) (W) 1.0 @ VGS = 10 V ID (A) "1.0 DDDD SO-8 N/C S S G 1 2 3 4 Top View S S 8 7 6 5 D D D D G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE N...
Description N-Channel enhancement-mode MOSFET
50-V (D-S) Single
400-mA Smart Regulator for Network Interface Card

File Size 51.43K  /  4 Page

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    SI9434DY

Vishay Siliconix
Part No. SI9434DY
OCR Text enhancement-mode MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(ON) (W) 0.040 @ VGS = -4.5 V 0.060 @ VGS = -2.5 V ID (A) "6.4 "5.1 Recommended upgrade: Si9424DY SSS SO-8 S S S G 1 2 3 4 Top View DDDD P-Channel MOSFET 8 7 6 5 D D D D G ...
Description P-Channel enhancement-mode MOSFET

File Size 42.80K  /  4 Page

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    STD4N25 3092

STMICROELECTRONICS[STMicroelectronics]
Part No. STD4N25 3092
OCR Text ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 s s s s s V DSS 250 V R DS( on) < 1.1 ID 4A s s TYPICAL RDS(on) = 0.7 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

File Size 141.34K  /  10 Page

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    TPC8102

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8102
OCR Text ...DSS = -10 A (max) (VDS = -30 V) enhancement-mode : Vth = -0.8~ -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current D...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)

File Size 469.72K  /  7 Page

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    TPC8106-H

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8106-H
OCR Text ...DSS = -10 A (max) (VDS = -30 V) enhancement-mode : Vth = -0.8~ -2.0 V (VDS =- 10 V, ID = -1 mA) Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (...
Description SILICON P CHANNEL MOS TYPE

File Size 510.73K  /  7 Page

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For enhancement-mode Found Datasheets File :: 25211    Search Time::3.703ms    
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