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    WEDC[White Electronic Designs Corporation]
Part No. W3EG7262S265D3 W3EG7262S262D3 W3EG7262S265JD3 W3EG7262S202D3 W3EG7262S202JD3 W3EG7262S262JD3 W3EG7262S-D3 W3EG7262S-JD3
OCR Text ...tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. One device bank; Active-ReadPrecharge Burst = 2; tRC=tRC (MIN); tCK=tCK (MIN); lOUT = 0mA; Address and control inputs ...
Description 512MB - 2X32Mx72 DDR SDRAM UNBUFFERED

File Size 190.93K  /  12 Page

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    WEDC[White Electronic Designs Corporation]
Part No. W3EG7264S403JD3 W3EG7264S335JD3 W3EG7264S265JD3 W3EG7264S202JD3 W3EG7264S263JD3 W3EG7264S-D3 W3EG7264S-JD3
OCR Text ...tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. One device bank; Active-ReadPrecharge Burst = 2; tRC=tRC (MIN); tCK=tCK (MIN); lOUT = 0mA; Address and control inputs ...
Description 512MB - 64Mx72 DDR SDRAM UNBUFFERED

File Size 148.70K  /  11 Page

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    WEDC[White Electronic Designs Corporation]
Part No. W3EG7265S202JD3 W3EG7265S-JD3 W3EG7265S265JD3 W3EG7265S262JD3
OCR Text ...tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. One device bank; Active-ReadPrecharge Burst = 2; tRC=tRC (MIN); tCK=tCK (MIN); lOUT = 0mA; Address and control inputs ...
Description 512MB - 2x32Mx72 DDR SDRAM REGISTERED, w/PLL

File Size 168.79K  /  12 Page

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    WEDC[White Electronic Designs Corporation]
Part No. W3EG7266S262D3 W3EG7266S-D3 W3EG7266S265D3 W3EG7266S202D3
OCR Text ...tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. One device bank; Active-ReadPrecharge Burst = 2; tRC=tRC (MIN); tCK=tCK (MIN); lOUT = 0mA; Address and control inputs ...
Description 512MB - 64Mx72 DDR SDRAM REGISTERED w/PLL

File Size 148.68K  /  12 Page

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    WEDC[White Electronic Designs Corporation]
Part No. WED3EG6417S202D4 WED3EG6417S265D4 WED3EG6417S262D4 WED3EG6417S-D4
OCR Text ...CK (MIN); DQ, DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. One device banks; Active-Read-Precharge; Burst = 2; tRC=tRC(MIN); tCK=tCK (MIN); lout=0mA; Address and control inputs ...
Description 128MB - 16Mx64 DDR SDRAM UNBUFFERED

File Size 263.54K  /  7 Page

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    WEDC[White Electronic Designs Corporation]
Part No. WED3EG7233S262D3 WED3EG7233S202D3 WED3EG7233S265JD3 WED3EG7233S202JD3 WED3EG7233S262JD3 WED3EG7233S265D3 WED3EG7233S-D3 WED3EG7233S-JD3
OCR Text ...tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. One device bank; Active-ReadPrecharge Burst = 2; tRC=tRC (MIN); tCK=tCK (MIN); lOUT = 0mA; Address and control inputs ...
Description 256MB - 2x16Mx72 DDR SDRAM UNBUFFERED

File Size 232.60K  /  11 Page

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    R20AN0278EJ0100

Renesas Electronics Corporation
Part No. R20AN0278EJ0100
OCR Text ...sample code) ........ 3 5. changing the debug tool ............................................................................................... 3 6. setting properties of the debug tool .............................................
Description Renesas Starter Kit Sample Code

File Size 339.73K  /  8 Page

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    WEDC[White Electronic Designs Corporation]
Part No. WED3EG72M18S403JD3MG WED3EG7218S-JD3 WED3EG72M18S403JD3SG WED3EG72M18S202JD3IMG WED3EG72M18S202JD3ISG WED3EG72M18S202JD3MG WED3EG72M18S202JD3SG WED3EG72M18S262JD3IMG WED3EG72M18S262JD3ISG WED3EG72M18S262JD3MG WED3EG72M18S262JD3SG WED3EG72M18S265JD3IMG WED3EG72M18S265JD3ISG WED3EG72M18S265JD3MG WED3EG72M18S265JD3SG WED3EG72M18S355JD3IMG WED3EG72M18S355JD3ISG WED3EG72M18S355JD3MG WED3EG72M18S355JD3SG WED3EG72M18S403JD3IMG WED3EG72M18S403JD3ISG
OCR Text ...=TCK(MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles One device bank; Active-readPrecharge; Burst = 2; TRC=TRC(MIN); TCK=TCK(MIN); lout=0mA; Address and control inputs chan...
Description 128MB - 16Mx72 DDR SDRAM UNBUFFERED

File Size 172.96K  /  12 Page

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    WV3EG128M72EFSR262D3MG WV3EG128M72EFSR-D3 WV3EG128M72EFSR335D3MF WV3EG128M72EFSR335D3MG WV3EG128M72EFSR265D3MF WV3EG128M

WEDC[White Electronic Designs Corporation]
Part No. WV3EG128M72EFSR262D3MG WV3EG128M72EFSR-D3 WV3EG128M72EFSR335D3MF WV3EG128M72EFSR335D3MG WV3EG128M72EFSR265D3MF WV3EG128M72EFSR265D3MG WV3EG128M72EFSR262D3MF WV3EG128M72EFSR335D3SG WV3EG128M72EFSR262D3SF WV3EG128M72EFSR262D3SG WV3EG128M72EFSR265D3SF WV3EG128M72EFSR265D3SG WV3EG128M72EFSR335D3SF
OCR Text ...tCK (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. One device bank; Active-Read-Precharge Burst = 2; tRC=tRC (MIN); tCK=tCK (MIN); lOUT = 0mA; Address and control inputs...
Description 1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL, FBGA

File Size 243.61K  /  13 Page

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    WEDC[White Electronic Designs Corporation]
Part No. WV3EG232M64EFSU265D4MG WV3EG232M64EFSU335D4SG WV3EG232M64EFSU262D4MG WV3EG232M64EFSU262D4SG WV3EG232M64EFSU265D4SG WV3EG232M64EFSU335D4MG WV3EG232M64EFSU-D4
OCR Text ... DDR266B; DQ, DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating current - One bank operation ; One bank open, BL=4, Reads -- Refer to the following page for detailed test co...
Description 512MB - 2x32Mx64 DDR SDRAM, UNBUFFERED, w/PLL, FBGA

File Size 160.01K  /  11 Page

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