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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15M321
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Description |
INSULATED gate bipolar TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA INSULATED gate bipolar TRANSISTOR SILICON N CHANNEL IGBT
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File Size |
257.03K /
6 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRGB4064DPBF
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Description |
INSULATED gate bipolar TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED gate bipolar TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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File Size |
367.91K /
10 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRGB4059DPBF
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Description |
INSULATED gate bipolar TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED gate bipolar TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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File Size |
283.45K /
10 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRGI4061DPBF
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Description |
INSULATED gate bipolar TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED gate bipolar TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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File Size |
285.15K /
10 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15Q311
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Description |
INSULATED gate bipolar TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated gate bipolar Transistor Silicon N Channel IGBT
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File Size |
167.37K /
7 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
M57161L-01
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Description |
Integrated gate bipolar Transistor (IGBT) Modules: 250V HYBRID IC FOR DRIVING TRENCH-gate IGBT
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File Size |
112.05K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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