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ba1 Datasheet PDF File

For ba1 Found Datasheets File :: 4968 Search Time::2.032ms
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				Integrated Silicon Solution, Inc
Part No.	IS43R16400B
OCR Text	...4 banks bank address pins ba0, ba1 autoprecharge pins a10/ap row addresses a0 C a11 column address a0 C a7 refresh count 4k / 64ms 2 integrated silicon solution, inc. rev.b 10/22/2011 is43r16400b functional block diagram (4mx16) c...
Description	Four internal banks for concurrent operation
File Size	4,726.40K / 57 Page	View it Online	Download Datasheet

				NANYA TECHNOLOGY CORP
Part No.	M1U25664TUH4A0F-5A
OCR Text	...s a0-a13 and i/o inputs ba0 and ba1 using the mode register set cycle. the dimm uses serial presence- detect implemented via a serial 2,048-bit eeprom using a standard iic protocol. the first 128 byt es of serial pd data are programmed ...
Description	32M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
File Size	127.77K / 14 Page	View it Online	Download Datasheet

				HYNIX SEMICONDUCTOR INC
Part No.	HMT41GU6MFR8C-H9 HYNIXSEMICONDUCTORINC-HMT41GU6MFR8C-RD HMT41GU6MFR8C-PB
OCR Text	...oprecharge is selected and ba0, ba1, ba2 defines the bank to be pre- charged. if ap is low, autoprecharge is disabled. during a precharge com- mand cycle, ap is used in conjunction with ba0, ba1, ba2 to control which bank(s) to precharge. ...
Description	DDR DRAM MODULE, DMA240
File Size	363.97K / 52 Page	View it Online	Download Datasheet

				Elpida Memory
Part No.	EDJ4216EFBG-GN-F EDJ4216EFBG-DJ-F EDJ4204EFBG EDJ4208EFBG-DJ-F
OCR Text	... d e f g h j a3 vdd a0 a12(/bc) ba1 vdd a5 vss a2 a1 a4 vss k l m n vss vdd 1 vddq vss vss 2 vssq dq0 vss dq2 dq6 vssq vddq vrefdq vss vdd /cs ba0 a7 /reset nc a15 vdd 3 nc dqs /dqs dq4 /ras /cas /we ba2 a9 a13 7 nu/(/tdqs) dm/tdqs dq1 vdd ...
Description	4G bits DDR3L SDRAM
File Size	447.38K / 29 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	P13B16212A P13B16212V M464S3254DTS PC133 M464S3254DTS-L1H_C1H M464S3254DTS-L1L_C1L M464S3254DTS-L7A_C7A M464S3254DTS-L7C_C7C M464S3254DTS-L1L/C1L M464S3254DTS-L7A/C7A M464S3254DTS-L1H/C1H M464S3254DTS-L7C/C7C
OCR Text	...k DQ53 DQ54 DQ55 VDD A7 BA0 VSS ba1 A11 VDD DQM6 DQM7 VSS DQ56 DQ57 DQ58 DQ59 VDD DQ60 DQ61 DQ62 DQ63 VSS **SCL VDD DQ46 95 DQ47 97 VSS 99 NC 101 NC 103 105 107 Voltage Key 109 CLK0 62 CKE0 111 VDD VDD 113 64 RAS 66 CAS 115 68 CKE1 117 WE 7...
Description	Protective Eyeglasses RoHS Compliant: NA Personal protection, Spectacles; RoHS Compliant: NA Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD
File Size	165.11K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4S641632H K4S640832H-UC75 K4S640432H-UC75 K4S640432H-TC K4S640832H-TL75 K4S641632H-UL75 K4S640432H-UC K4S640432H-UL75 K4S640832H-UL75 K4S641632H-UL60 K4S641632H-UL70 K4S641632H-TC75 K4S641632H-TC70 K4S641632H-TC60
OCR Text	...AS RAS RAS CS CS CS BA0 BA0 BA0 ba1 ba1 ba1 A10/AP A10/AP A10/AP A0 A0 A0 A1 A1 A1 A2 A2 A2 A3 A3 A3 VDD VDD VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 3...
Description	64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费 DELTA CONN 14POS PLUG W/O INSERT DELTA CONN 14 POS PLUG BAIL LOCK
File Size	142.44K / 14 Page	View it Online	Download Datasheet

				INFINEON TECHNOLOGIES AG
Part No.	HYS64V16221GDL-8-C2
OCR Text	...64v8200gdl-7.5 4 8mx16 12 ba0, ba1 9 4k 64 ms 8m x 64 hys64v8200gdl-8 4 8mx16 12 ba0, ba1 9 4k 64 ms 16m x 64 hys64v16220/1gdl-7.5 8 8mx16 12 ba0, ba1 9 4k 64 ms 16m x 64 hys64v16220/1gdl-8 8 8mx16 12 ba0, ba1 9 4k 64 ms organisation ...
Description	16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
File Size	135.36K / 16 Page	View it Online	Download Datasheet

				INTEGRATED SILICON SOLUTION INC
Part No.	IS42S16800A-7TI-TR
OCR Text	...nk and row to be accessed (ba0, ba1 select the bank; a0-a11 select the row). the read or write commands in conjunction with address bits registered are used to select the starting column location for the burst access. programmable read or ...
Description	8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
File Size	589.84K / 61 Page	View it Online	Download Datasheet

For ba1 Found Datasheets File :: 4968 Search Time::2.032ms
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