900v.2 pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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900v.2 Datasheet PDF File

For 900v.2 Found Datasheets File :: 1510 Search Time::7.187ms
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				eupec GmbH
Part No.	BSM300GA170DLC
OCR Text	...ind. last) i c = 300a, v ce = 900v turn on delay time (inductive load) v ge = 15v, r g = 5 w , t vj = 25c t d,on - 0,1 - s v ge = ...2,1 2,5 v forward voltage i f = 300a, v ge = 0v, t vj = 125c - 2,1 2,5 v rckstromspitze i f = 30...
Description	IGBT-Modules
File Size	106.98K / 9 Page	View it Online	Download Datasheet

				International Rectifier Vishay Intertechnology, Inc.
Part No.	IRG4PF50W-EPBF IRG4PF50W
OCR Text	... application benefits v ces = 900v v ce(on) typ. = 2.25v @v ge = 15v, i c = 28a parameter max. units v ces collector-to-emitter breakdown voltage 900 v i c @ t c = 25c continuous collector current 51 i c @ t c = 100c continuous...
Description	900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package 51 A, 900 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
File Size	141.70K / 8 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2224-01R
OCR Text	...che Proof N-channel MOS-FET 900V 4 3A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters Gen...2,5 Typ. 3,0 10 0,2 10 2,5 4 1000 90 25 20 10 60 15 Max. 3,5 500 1,0 100 4 1500 135 40 30 15 9...
Description	N-channel MOS-FET
File Size	174.23K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTGT100A170TG
OCR Text	...g (25c) v ge = 15v v bus = 900v i c = 100a r g = 4.7 ? 180 ns t d(on) turn-on delay time 400 t r rise time 50 ...2.2 v f diode forward voltage i f = 100a t j = 125c 1.9 v t j = 25c 385 t rr ...
Description	IGBT Power Module
File Size	281.66K / 5 Page	View it Online	Download Datasheet

				Advanced Power Technology Advanced Power Electronics, Corp.
Part No.	APT40GP90JDF2
OCR Text	...wer mos 7 ? igbt apt40gp90jdf2 900v sot-227 g e e c isotop "ul recognized" apt40gp90jdf2 900 20 30 68 32 160 160a @ 900v 284 -55 to 150 300...2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e o...
Description	MOSFET 68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
File Size	207.37K / 9 Page	View it Online	Download Datasheet

				Dynex Semiconductor, Ltd.
Part No.	DFM600BXS17-A000
OCR Text	...z iec1287. v 1 = 1200v, v 2 = 900v, 50hz rms max. 1700 600 1200 3674 67.5 2.0 4 10 test conditions continuous dissipation - junction to case mounting torque 5nm (with mounting grease) - - mounting - m6 electrical connections - m6 paramete...
Description	600 A, 1700 V, SILICON, RECTIFIER DIODE B, 2 PIN
File Size	117.82K / 7 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DIM100WHS17-E000
OCR Text	... 1mhz - - t j = 125?c, v cc = 900v, i 1 t p 10 s, v ce(max) = v ces ?l*. di/dt i 2 iec 60747-9 parameter collector cut-off current gate leakage current gate threshold voltage collector-emitter saturation voltage diode forward cur...
Description	IGBT Power Module
File Size	341.43K / 8 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DIM100WHS17-A000
OCR Text	...c = 100a v ge = 15v v ce = 900v r g(on) = r g(off) = 10 ? l ~ 100nh i f = 100a, v r = 900v, di f /dt = 1500a/ s parameter turn-off...2 2.5 3 3.5 4 4.5 5 collector-emitter voltage, v ce - (v) collector current, i c - (a) common emi...
Description	IGBT Power Module
File Size	321.80K / 8 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	BSM200GA170DLC
OCR Text	...ind. last) i c = 200a, v ce = 900v turn on delay time (inductive load) v ge = 15v, r g = 7,5 w , t vj = 25c t d,on - 0,1 - s v ge ...2,1 2,5 v forward voltage i f = 200a, v ge = 0v, t vj = 125c - 2,1 2,5 v rckstromspitze i f = 20...
Description	IGBT-Modules
File Size	108.27K / 9 Page	View it Online	Download Datasheet

For 900v.2 Found Datasheets File :: 1510 Search Time::7.187ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |