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  800v us Datasheet PDF File

For 800v us Found Datasheets File :: 950    Search Time::1.328ms    
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    Winsem Technology
Part No. WTBV56DMR
OCR Text ... bv ceo : 400v ? bv cbo : 800v ? i c : 4a ...us storage time t stg 3.5 5 us fall time t f 0.2 0.6 us ...
Description POWER TRANSISTOR

File Size 384.85K  /  5 Page

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    Microsemi
Part No. LX1802
OCR Text ...est conditions: vhi=16v, igbt_e=800v, fin=10mhz, igbt_g load=3nf. lx1801 parameter symbol test conditions min typ max units vo...us fall time for igbt_g t fall,g -90%-10%*igbt_g(pk) 5 us enable time for igbt_g t en,g -...
Description High Voltage 1/2 Bridge Defibrillator Switch

File Size 137.06K  /  4 Page

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    SDR60U090 SDR60U080 SDR60U100 SDR60U110

Solid States Devices, Inc
Part No. SDR60U090 SDR60U080 SDR60U100 SDR60U110
OCR Text ...ctory. Voltage/Family 080 = 800v 090 = 900V 100 = 1000V 110 = 1100V 120 = 1200V Recovery Time U = Ultra Fast Maximum Ratings Pea...us) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) Cas...
Description Low VF Ultra Fast Recovery Rectifier

File Size 81.41K  /  2 Page

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    STK0380D

KODENSHI KOREA CORP.
Part No. STK0380D
OCR Text ... cut-off current i dss v ds =800v, v gs =0v - - 10 ua v ds =640v, t c =125 ? c - - 100 ua gate leakage current i gss v ds =0v, v g...us - 372 - ns reverse recovery charge (note 4,5) q rr - 1.8 - uc note: 1. repeated rati...
Description SWWITCHINNG REGGULATOOR APPLICATIOON

File Size 370.19K  /  8 Page

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    List of Unclassifed Manufac...
Part No. MSTC110-08 MSTC110-12 MSTC110-16
OCR Text ...mst c110 - 12 mstc 110 - 16 800v 1200v 1600v 900v 1300v 1700v symbol conditions values units i tav s ine 180 o ;...us dv/dt t j = t vjm ,2/3 v drm , linear vol tage rise 1000 v/us a maximum allowable...
Description Thyristor/Diode Modules

File Size 397.67K  /  4 Page

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    SKM100GB125DN

Electronic Theatre Controls, Inc.
Semikron International
ETC
List of Unclassifed Manufacturers
Part No. SKM100GB125DN
OCR Text ...A nF VGE = 0 V f = 1 MHz 800v 10 Cies 1 Coes C VGE 2 0 0Q Gate 200 400 600 nC 800 0,1 0 VCE 10 20 V Cres 30 Fig. 13...us 5000 Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG) Fig. 23 Typ. CAL...
Description SEMITRANSR M Ultra Fast IGBT Modules

File Size 121.05K  /  6 Page

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    Micro Commercial Compon...
Part No. MT110CB08T1 MT110CB12T1 MT110CB16T1
OCR Text ...12t1 mt110cb16t1 mt110cb18t1 800v 1200v 1600v 1800v 900v 1300v 1700v 1900v 2 of 6 diode maximum ratings symbol item conditio...us dv/dt critical rate of rise of off-state voltage, min. t j =t vjm ,2/3v drm linear voltage r...
Description THYRISTOR/DIODE 800~1800 Volts 110 Amp MODULE

File Size 724.84K  /  6 Page

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    FJI5603D FJI5603DTU

Fairchild Semiconductor, Corp.
Part No. FJI5603D FJI5603DTU
OCR Text ....5mA, IC=0 VCES=1600V, IE=0 VCE=800v, VBE=0 VEB=12V, IC=0 VCE=3V, IC=0.4A VCE=10V, IC=5mA TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25...us),TIME TJ=125 C 300 o 2.5 TJ=125 C o 2 200 TJ=25 C o 1.5 TJ=25 C...
Description NPN Silicon Transistor; Package: TO-262(I2PAK); No of Pins: 3; Container: Rail 3 A, 800 V, NPN, Si, POWER TRANSISTOR

File Size 139.62K  /  7 Page

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    Yangzhou yangjie electr...
Part No. MT110CB08T1 MT110CB12T1 MT110CB16T1
OCR Text ... m t110cb16t1 mt110cb18t1 800v 1200v 1600v 1800v 900v 1300v 1700v 1900v circuit 1 3 2 4 5 applications ? ...us dv/dt critical rate of rise of o ff - state voltage, min. t j = t vjm ,2/3 v drm linea...
Description Thyristor/Diode Modules

File Size 225.91K  /  4 Page

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    SDR50U090 SDR50U080 SDR50U100 SDR50U110 SDR50U120

Solid States Devices, Inc
Part No. SDR50U090 SDR50U080 SDR50U100 SDR50U110 SDR50U120
OCR Text ...TO-259 Voltage/Family 080 = 800v 090 = 900V 100 = 1000V 110 = 1100V 120 = 1200V Maximum Ratings Peak Repetitive Reverse and DC Block...us) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) ...
Description Ultra Fast Recovery Rectifier

File Size 94.14K  /  3 Page

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