...
3.160.1
3.80.3
Unit: mm
8.0+0.5 -0.1 3.20.2
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) 2...16.01.0
* High collector-emitter voltage (Base open) VCEO * Optimum for the driver stage of low-f...
...0.7MHz 150 70 - 0.1 - 0.7 300 2.8 22 1.2 4.0 50 2.0 min typ max - 0.1 -100 -10 220 V V MHz dB pF Unit A A
*h
FE
Rank classificatio...16
Noise figure NF (dB)
-1 -3 -10 -30 -100
Power gain PG (dB)
3
300
12
2
200
...
Description
Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)
... Typ -- -- -- -- -- -- -- 120 1.8 -- Max -- -- -0.5 800 -- -0.75 V -0.5 -- -- 5.0 V MHz pF dB Unit V A A Test conditions I C = -1 mA, RBE = ...16 -14 -12 -10
PC =
-8 -6
0 30 m
200
W
-8
-4 -2
-6
100
-4
-2 A IB = 0
...
...
3.160.1
3.80.3
Unit: mm
8.0+0.5 -0.1 3.20.2
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) C...16.01.0
* Output of 4 W can be obtained by a complementary pair with 2SC1847 * TO-126B package wh...
Description
Power Device - Power Transistors - Others Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)