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  4.720v Datasheet PDF File

For 4.720v Found Datasheets File :: 473    Search Time::2.312ms    
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    FQAF11N90

FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF11N90
OCR Text ... (Note 1) FQAF11N90 900 7.2 4.55 28.8 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source ...720V Capacitance [pF] 3000 2500 2000 1500 1000 500 0 -1 10 Coss 6 Crss Notes : 1....
Description 900V N-Channel MOSFET

File Size 662.51K  /  8 Page

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    IRGBF30F

International Rectifier
Part No. IRGBF30F
OCR Text ... D C Collector C urrent (A ) 4.0 12 8 3.0 I C = 1 1A 4 I C = 5.5 A 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 T C , C ase Tem perature (C ) T C , C a s e Te m p e ra ture (C ) Fig....
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 102.65K  /  6 Page

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    HGTG15N120C3D

INTERSIL[Intersil Corporation]
Part No. HGTG15N120C3D
OCR Text ... OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,76...720V, RGE = 25, TJ = 125oC 150 HGTG15N120C3D Typical Performance Curves 300 Unless Otherwi...
Description 35A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 100.95K  /  9 Page

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    IRG4MC50F

IRF[International Rectifier]
Part No. IRG4MC50F
OCR Text ...channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions * Design...720V 720V 4 X IC@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m a...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 140.36K  /  8 Page

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    IRG4MC50U IRG4MC50U-15

IRF[International Rectifier]
Part No. IRG4MC50U IRG4MC50U-15
OCR Text ...channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions * Design...720V 720V 4 X IC@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m a...
Description Simple Drive Requirements
INSULATED GATE BIPOLAR TRANSISTOR

File Size 143.12K  /  8 Page

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    IRG4PH20KD

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH20KD
OCR Text ... Benefits * Latest generation 4 IGBT's offer highest power density motor controls possible * HEXFREDTM diodes optimized for performance wi...720V, TJ = 125C VGE = 15V, R G = 50 50 -- TJ = 150C, See Fig. 10,11,18 30 -- IC = 5.0A, VCC = 800V n...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 1200伏,的Vce(on)典\u003d 3.17V,@和VGE \u003d 15V的,集成电路\u003d 5.0a中)

File Size 273.76K  /  10 Page

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    IRG4PH20K IRG4PH20

IRF[International Rectifier]
Part No. IRG4PH20K IRG4PH20
OCR Text ...de and IGBT * Latest generation 4 IGBT's offer highest power density motor controls possible TO-247AC Absolute Maximum Ratings Parame...720V, TJ = 125C VGE = 15V, RG = 50 23 -- TJ = 150C, 28 -- IC = 5.0A, VCC = 960 ns 100 -- VGE = 15V, ...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

File Size 221.44K  /  8 Page

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    FQP3N90

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQP3N90
OCR Text ...* * * * * 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche...720V Capacitance [pF] 600 6 Coss 400 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 Crss ...
Description 900V N-Channel MOSFET 3.6 A, 900 V, 4.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 686.80K  /  8 Page

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    GA250TD120U

IRF[International Rectifier]
Part No. GA250TD120U
OCR Text 4 IGBT technology * Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz * Very low conduction and switc...720V 343 -- VGE = 15V 54 -- mJ See Fig.17 through Fig.21 54 -- 108 162 44517 -- VGE = 0V 1979 -- pF ...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT
HALF-BRIDGE IGBT DOUBLE INT-A-PAK

File Size 228.83K  /  10 Page

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    FUJI[Fuji Electric]
Part No. 2SK3875-01 28F256L18
OCR Text ...Thermal impedance' graph. Note *4:IF< -ID, -di/dt=50A/s,VCC< BVDSS, Tch< 150C = = = kV/s VDS < 900V = kV/s Note *4 Tc=25C W Ta=25C C C ...720V VGS=0V VGS=30V VDS=0V ID=6.5A VGS=10V ID=6.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=6.5A VG...
Description Power MOSFET / Super FAP-G Series
FUJI POWER MOSFET Super FAP-G Series

File Size 99.53K  /  4 Page

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