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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOD9N40
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| OCR Text |
...al gate charge v gs =10v, v ds =320v, i d =8a gate source charge gate drain charge i s =1a,v gs =0v v ds =40v, i d =4a v ds =0v, v gs =30v v gs =10v, i d =4a i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c v ds =5v i d =250 ... |
| Description |
400V,8A N-Channel MOSFET
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| File Size |
513.61K /
6 Page |
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it Online |
Download Datasheet
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Supertex, Inc.
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| Part No. |
AP0332
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| OCR Text |
...pertex ap0332 is an 8 p-channel 320v common source power mosfet array with a cmos 8 bit addressable latch. the outputs are guaranteed to have very low leakage current. the outputs are addressed by logic inputs a0, a1, and a2. the address... |
| Description |
8 P-Channel Latchable Power MOSFET Array
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| File Size |
48.46K /
4 Page |
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it Online |
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ST Microelectronics, Inc.
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| Part No. |
STTH120R04TV
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| OCR Text |
...0 7.5 5.0
IRM(A)
IF= 60A VR=320v
Tj=125 C
tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
2.5 0.0 10
Tj=25 C
dIF/dt(A/s) 100 1000
3/7
Characteristics
STTH120R04TV
Figure 5.
160 140 120 100
Reverse recovery ti... |
| Description |
Ultrafast recovery diode
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| File Size |
98.85K /
7 Page |
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it Online |
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意法半导
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| Part No. |
STTH60R04W
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| OCR Text |
...25.0 10 100 1000 i f = 60a v r =320v t j =125 c t j =25 c di f /dt(a/s) figure 5. reverse recovery time versus di f /dt (typical values) figure 6. reverse recovery charges versus di f /dt (typical values) t rr (ns) 0 20 40 60 80 100 120 1... |
| Description |
Ultrafast recovery diode
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| File Size |
79.37K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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