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Nanya
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| Part No. |
M2S4G64CB8HB5N M2S1G64CBH4B5P
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| OCR Text |
...ered ddr3 s o - dimm based on 256mx8 ddr 3 sdram b - die devices . ? 4gb: 512 mx64 unbuffered ddr3 s o - dimm based on 256 mx 8 ddr 3 sdram b - die devices . ? intended for 533 mhz /667mhz /800mhz applications ... |
| Description |
Unbuffered DDR3 SO-DIMM
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| File Size |
617.21K /
28 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K4C561638C-TCDA K4C560838C-TCDA K4C561638C-TCD4000 K4C560838C-TCD3 K4C560838C-TCDA0 K4C560838C-TCD40
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| OCR Text |
...s) da (366mbps ) d3 (333mbps ) 256mx8 k4c560838c-tcd4 k4c560838c-tcda k4c560838c-tcd3 256mx16 k4c561638c-tcd4 k4c561638c-tcda k4c561638c-tcd3 t : tsop ii (400mil x 875mil) d4 : 400bps/pin (200mhz, cl=4) da : 3 6 6 b... |
| Description |
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk 256Mb的网络内
256Mb Network-DRAM 256Mb的网络内
32M X 8 SYNCHRONOUS DRAM, 0.75 ns, PDSO66
32M X 8 SYNCHRONOUS DRAM, 0.65 ns, PDSO66
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| File Size |
885.55K /
42 Page |
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it Online |
Download Datasheet |
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256mx8 Found Datasheets File :: 54 Search Time::1.813ms
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