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  227b Datasheet PDF File

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    IXFN44N100P

IXYS Corporation
Part No. IXFN44N100P
OCR Text ...s ns ns ns nC nC nC C/W C/W SOT-227b Outline Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 22A, -di/dt = 100A/s VR = 100V ...
Description Polar Power MOSFET HiPerFET

File Size 104.11K  /  4 Page

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    IXFN44N100Q3

IXYS Corporation
Part No. IXFN44N100Q3
OCR Text ...W (M4 screws (4x) supplied) SOT-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 22A...
Description HiperFET Power MOSFET Q3-Class

File Size 119.25K  /  5 Page

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    IXFN300N10P

IXYS Corporation
Part No. IXFN300N10P
OCR Text ...s ns ns ns nC nC nC C/W C/W SOT-227b Outline (IXFN) Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0V Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 300 1000 1.3 200 0.71 10 A A V n...
Description Polar Power MOSFET HiPerFET

File Size 115.32K  /  4 Page

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    IXFN420N10T

IXYS Corporation
Part No. IXFN420N10T
OCR Text ...W (M4 screws (4x) supplied) SOT-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 1...
Description GigaMOS Trench HiperFET Power MOSFET

File Size 174.52K  /  6 Page

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    IXFE23N100 IXFE24N100

IXYS Corporation
Part No. IXFE23N100 IXFE24N100
OCR Text ...C C C V~ V~ *Conforms to SOT-227b outline *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) rated *Low package inductance *Fast intrinsic Rectifier Applications * DC-DC conver...
Description Single MOSFET Die

File Size 423.74K  /  2 Page

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    IXFN40N110P

IXYS Corporation
Part No. IXFN40N110P
OCR Text ...s ns ns ns nC nC nC C/W C/W SOT-227b Outline Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20A, -di/dt = 100A/s VR = 100V, VG...
Description Polar Power MOSFET HiPerFET

File Size 105.69K  /  4 Page

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    IXFN40N90P

IXYS Corporation
Part No. IXFN40N90P
OCR Text ...ns ns nC nC nC 0.18 C/W C/W SOT-227b Outline Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20A, -di/dt = 100A/s VR = 100V ...
Description Polar Power MOSFET HiPerFET

File Size 108.34K  /  4 Page

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    IXFN32N100P

IXYS Corporation
Part No. IXFN32N100P
OCR Text ...ns ns nC nC nC 0.18 C/W C/W SOT-227b Outline Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 16A RG = 1 (External) 55 76 43 225 85 94 Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS =...
Description Polar Power MOSFET HiPerFET

File Size 104.45K  /  4 Page

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    IXFN32N120P

IXYS Corporation
Part No. IXFN32N120P
OCR Text ...W (M4 screws (4x) supplied) SOT-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20...
Description Polar HiPerFET Power MOSFET

File Size 115.18K  /  5 Page

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    HGT1N40N60A4 HGT1N40N60A4D

Fairchild Semiconductor, Corp.
Part No. HGT1N40N60A4 HGT1N40N60A4D
OCR Text ...E Packaging JEDEC STYLE SOT-227b GATE EMITTER NOTE: When ordering, use the entire part number. TAB (ISOLATED) COLLECTOR EMITTER Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4...
Description 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V的,开关电源系列N沟道IGBT的与反平行Hyperfast二极
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 150.59K  /  10 Page

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