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AB310S EN8636A C16R6L UNR2123 HY5PS1G 183J10 FAIV10 24512A
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  2.16mb Datasheet PDF File

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    S71PL254

SPANSION
Part No. S71PL254
OCR Text ...atures Power supply voltage of 2.7 to 3.1 volt High performance -- 55 ns -- 65 ns (65 ns Flash, 70ns pSRAM) Packages -- 7 x 9 x 1.2mm 56 ba...16Mb 32Mb 64Mb S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 S71PL064JA0 S71PL064JB0 S71PL127JA0 S...
Description STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM

File Size 2,321.50K  /  196 Page

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    S71JL064HA0

AMD
SPANSION
Part No. S71JL064HA0
OCR Text ...res Operating Voltage Range of 2.7 to 3.3 V High Performance -- Access time as fast as 55 ns Packages -- 73-ball FBGA--8 x 11.6 mm -- 88-ba...16Mb x 16-only SRAM -- pSRAM x 16 only: 8Mb pSRAM 16Mb pSRAM 32Mb pSRAM 64Mb pSRAM The products c...
Description Stacked Multi-chip Product (MCP) Flash Memory And Psram CMOS 3.0Volt-only, Simultaneous Operation Flash Memories And Static RAM/pseudo-static RAM

File Size 1,439.08K  /  141 Page

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    K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240YT K5A3340YTC-T855 K5A3240YBC-T755 K5A3240YTC-T755 K5A3340YBC-T755 K5A

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240YT K5A3340YTC-T855 K5A3240YBC-T755 K5A3240YTC-T755 K5A3340YBC-T755 K5A3340YBC-T855 K5A3340YT K5A3340YTC-T755
OCR Text ...TURES * Power Supply voltage : 2.7V to 3.3V * Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 524,288 x 8 / 262,144 x 16...16Mb / 16Mb * Flash Endurance : 100,000 Program/Erase Cycles Minimum * SRAM Data Retention : 1.5 V (...
Description Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

File Size 863.20K  /  45 Page

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    Sharp, Corp.
Part No. CXK77Q36162GB
OCR Text 2 cxk77q36162gb sony 25/27/3 16mb ddr1 hstl high speed synchronous sram ( 512k x 36 ) preliminary description features ? 3 speed bins cycle time / access time data rate -25 2.5ns / 1.8ns 800 mbps -27 2.7ns / 1.9ns 740 mbps -3 3.0ns /...
Description MEMORY-UHS Synch SRAMs 16Meg Ultra-High-Speed Synchronous SRAM (512K x 36) (24 pages 311K Rev. 7/3/02) 内存超高强同步SRAM6Meg超高速同步SRAM(为512k × 36)(2431.1牧师7/3/02

File Size 313.83K  /  24 Page

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    MD56V62160E-XXTA MD56V62160E-10 MD56V62160E-7

OKI electronic componets
Part No. MD56V62160E-XXTA MD56V62160E-10 MD56V62160E-7
OCR Text 2 md56v62160e 4-bank 1,048,576-word 16-bit synchronous dynamic ram 1/34 description the md56v62160e is a 4-bank 1,048,...16mb memory cells read data registe r output buffers column decoders input data r...
Description 4-Bank × 1,048,576-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM

File Size 510.00K  /  34 Page

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    AM29BDS640GBD3WSI AM29BDS640GTD9WSI AM29BDS640G AM29BDS640GBC3WSI AM29BDS640GBC4WSI AM29BDS640GBC8WSI AM29BDS640GBC9WSI

SPANSION[SPANSION]
Part No. AM29BDS640GBD3WSI AM29BDS640GTD9WSI AM29BDS640G AM29BDS640GBC3WSI AM29BDS640GBC4WSI AM29BDS640GBC8WSI AM29BDS640GBC9WSI AM29BDS640GBD4WSI AM29BDS640GBD8WSI AM29BDS640GBD9WSI AM29BDS640GTC3WSI AM29BDS640GTC4WSI AM29BDS640GTC8WSI AM29BDS640GTC9WSI AM29BDS640GTD3WSI AM29BDS640GTD4WSI AM29BDS640GTD8WSI
OCR Text ...Programmable Burst Interface -- 2 Modes of Burst Read Operation -- Linear Burst: 8, 16, and 32 words with wrap-around -- Continuous Sequential Burst Sector Architecture -- Eight 8 Kword sectors and one hundred twenty-six 32 Kword sectors -...
Description 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

File Size 497.05K  /  65 Page

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    SAMSUNG
Part No. K5A3280YBA
OCR Text ...TURES * Power Supply voltage : 2.7V to 3.3V * Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 1,048,576 x 8 / 524,288 x ...16Mb / 16Mb * Flash Endurance : 100,000 Program/Erase Cycles Minimum * SRAM Data Retention : 1.5 V (...
Description 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM

File Size 557.59K  /  47 Page

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