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MAX1436 UN206 MV53152 BFXXXX CND2050 SP3497E UGF3JB FQP2N60C
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  19-217-T1D-JP1Q2QY-3T Datasheet PDF File

For 19-217-T1D-JP1Q2QY-3T Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    TCDT1DW TCDT1MW

TAITRON Components Incorporated
Part No. TCDT1DW TCDT1MW
Description 1.0A Sintered Glass Passivated Standard Rectifier

File Size 196.34K  /  7 Page

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HUA FENG CIRCUIT





    BSV52LT1 BSV52LT1D

ON Semiconductor
Part No. BSV52LT1 BSV52LT1D
Description Switching Transistor

File Size 101.39K  /  3 Page

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    BAV74LT1D

ON Semiconductor
Part No. BAV74LT1D
Description Monolithic Dual Switching Diode

File Size 109.47K  /  3 Page

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    BAS16HT1D BAS16HT1

ONSEMI[ON Semiconductor]
Part No. BAS16HT1D BAS16HT1
Description SWITCHING DIODE 0.2 A, 75 V, SILICON, SIGNAL DIODE

File Size 41.59K  /  4 Page

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    Para Light Electronics
Part No. L-51ROPT1D1
Description Receiver Module

File Size 1,159.51K  /  14 Page

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    BAW56LT1D

ON Semiconductor
Part No. BAW56LT1D
Description Dual Switching Diode Common Anode

File Size 116.60K  /  4 Page

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    NE3520S03-T1D-A

California Eastern Labs
Part No. NE3520S03-T1D-A
Description N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

File Size 443.03K  /  10 Page

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    NE3512S02-T1D-A NE3512S02 NE3512S02-T1D NE3512S02-T1C NE3512S02-T1C-A

CEL[California Eastern Labs]
Part No. NE3512S02-T1D-A NE3512S02 NE3512S02-T1D NE3512S02-T1C NE3512S02-T1C-A
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR

File Size 189.84K  /  8 Page

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    NE3520S03 NE3520S03-T1C NE3520S03-T1D

Renesas Electronics Corporation
Part No. NE3520S03 NE3520S03-T1C NE3520S03-T1D
Description N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

File Size 204.15K  /  10 Page

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    NE3517S03-T1C NE3517S03-T1D

Renesas Electronics Corporation
Part No. NE3517S03-T1C NE3517S03-T1D
Description K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET

File Size 198.77K  /  11 Page

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