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  1019.7 Datasheet PDF File

For 1019.7 Found Datasheets File :: 694    Search Time::1.25ms    
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    IRHM7064 JANSF2N7431 JANSG2N7431 IRHM7064UPBF IRHM8064

International Rectifier, Corp.
Part No. IRHM7064 JANSF2N7431 JANSG2N7431 IRHM7064UPBF IRHM8064
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions TO-254AA .12 ( .005 ) ...
Description 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET
60V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 60V00kRad高可靠性单N沟道MOSFET的工贸硬化在TO - 254AA封装

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    IRHN57250SE

International Rectifier, Corp.
Part No. IRHN57250SE
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- SMD-1 PAD ASSIGNME...
Description 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package 20000kRad高可靠性单N通道看到一贴片MOSFET的硬 1封装
RADIATION HARDENED POWER MOSFET

File Size 122.75K  /  8 Page

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    IRHN93150 IRHN9150

International Rectifier
Part No. IRHN93150 IRHN9150
OCR Text ...nt per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the de...
Description HEXFET? TRANSISTOR

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    IRHNA57064

International Rectifier
Part No. IRHNA57064
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Footnotes: Repetitive Rating; Pulse width limited b...
Description RADIATION HARDENED POWER MOSFET

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    IRH7250SE IRH7250SE-15

IRF[International Rectifier]
Part No. IRH7250SE IRH7250SE-15
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 160volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions --TO-204AE (Modified TO-...
Description Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-204AA/AE)
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package

File Size 117.58K  /  8 Page

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    IRH7250

International Rectifier
Part No. IRH7250
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions TO-204AE IR WORLD H...
Description RADIATION HARDENED POWER MOSFET

File Size 418.93K  /  12 Page

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    IRHM7250SE

International Rectifier
Part No. IRHM7250SE
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 160 volt VDS applied and VGS = 0 during irradiati...7 8 ( .14 9 ) 3 .5 3 ( .13 9 ) -A 1 3.8 4 ( .5 4 5 ) 1 3.5 9 ( .5 3 5 ) 6 .6 0 ( .2 60 ) 6 .3 2 ( .2...
Description RADIATION HARDENED POWER MOSFET

File Size 138.04K  /  8 Page

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    IRHN7250SE IRHN7250SE-15

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRHN7250SE IRHN7250SE-15
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions --SMD-1 PAD ASSIGNME...
Description Simple Drive Requirements
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package 20000kRad高可靠性单N通道看到一贴片MOSFET的硬 1封装

File Size 124.76K  /  8 Page

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    IRHN7250 JANSR2N7269U JANSF2N7269U JANSG2N7269U

International Rectifier
Part No. IRHN7250 JANSR2N7269U JANSF2N7269U JANSG2N7269U
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- SMD-1 PAD ASSIGNME...
Description 200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
RADIATION HARDENED POWER MOSFET

File Size 276.53K  /  12 Page

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    IRH7130 IRH8130 IRH7130-15

IRF[International Rectifier]
Part No. IRH7130 IRH8130 IRH7130-15
OCR Text ...diation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions TO-204AA IR WORLD HEA...
Description Simple Drive Requirements
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package
RADIATION HARDENED POWER MOSFET

File Size 462.13K  /  12 Page

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