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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ... 5 RDS(on) 0.125 0.20 ID 3.0a -2.5A P-CHANNEL MOSFET Top View SO-8 Absolute Maximum Ratings Parameter N-Channel ID @ T C = 25C ID @ T C = 70C IDM PD @T C = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, V GS @ 10V Conti...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...1A, VGS =0V ns Tj = 25C, Is = 7.0a, VDS = 16V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; duty cycle ...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...3A, VGS =0V ns Tj = 25C, Is = 7.0a, VDS = 16V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) * Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; dut...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ... 100C VGS = 20V VGS =4.5V, ID=7.0a VDS = 16V Current* Gate-Source Leakage Current* Total Gate Charge* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge* Gate Resistance Tu...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ... 100C VGS = 20V VGS =4.5V, ID=7.0a VDS = 16V Current* Gate-Source Leakage Current* Total Gate Charge* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge* Gate Resistance Tu...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ...V, ID = 250A VGS = 4.5V, ID = 7.0a VDS = VGS,ID = 250A VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100C VGS = 20V VGS=5V, ID=7.0a VDS = 16V Current* A nA Gate-Source Leakage Current* Total Gate Charge* Pre-Vth Gate-Source Charge Po...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...V RDS(on) max 0.85 ID 8.0a Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Co...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0a) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0a
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0a)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...V Rds(on) max 0.85 ID 8.0a TO-220AB G DS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Dr...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0a)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0a)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0a)

File Size 87.92K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ...dge. Features * * * * * * 8.0a, 500V, RDS(on) = 0.8 @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G GDS TO-220 IRF Series GD S TO-...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ...V G S RDS(on) = 0.85 ID = 8.0a Description This new series of low charge HEXFET(R) power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the d...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0a) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0a
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0a)

File Size 169.91K  /  10 Page

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