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01926 1GTR2 MAX4411 APL0100 S2818 BT151 54HC1 LO30SHX
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  -40a- Datasheet PDF File

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    Advanced Power Electron...
Part No. AP96LT07GP-HF-14
OCR Text ...on-resistance 2 v gs =10v, i d =40a - - 4.2 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =5v, i d =40a - 80 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 25 ua i gss...
Description Simple Drive Requirement

File Size 118.01K  /  4 Page

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    SamHop
Part No. STP80L60 STB80L60
OCR Text ...lay time m ohm v gs =10v , i d =40a v ds =5v , i d =40a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua ...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 277.65K  /  8 Page

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    DG858BW45-15

Dynex Semiconductor
Part No. DG858BW45-15
OCR Text ...m , t j = 125 o c, di gq /dt = 40a/ m s, cs = 3 m f rms on-state current a a a 3000 1180 1850 units repetitive peak controllable on-state current t hs = 80 o c. double side cooled, half sine 50hz i t(rms) i t(av) mean on-state current fig...
Description Gate Turn-off Thyristor

File Size 257.88K  /  19 Page

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    FGH40N60SMDF

Fairchild Semiconductor
Part No. FGH40N60SMDF
OCR Text ...itter saturation voltage i c = 40a , v ge = 15v -1.92.5v i c = 40a , v ge = 15v, t c = 150 o c -2.1- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1880 - pf c oes output capacitance - 1...
Description 600V, 40A, Field Stop IGBT

File Size 301.10K  /  9 Page

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    Advanced Power Electronics
Part No. AP73T03GJ AP73T03GS
OCR Text ...on-resistance 2 v gs =10v, i d =40a - - 2.8 m v gs =4.5v, i d =30a - - 4 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 - 2.5 v g fs forward transconductance v ds =10v, i d =30a - 30 - s i dss drain-source leakage current...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 148.27K  /  6 Page

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    CED61A3

Chino-Excel Technology
Part No. CED61A3
OCR Text 40a , r ds(on) =13.5m @v gs =10v. super high dense cell design for extremely low r ds(on) . high power and current handling capability. to-251 & to-252 package. absolute maximum ratings (tc=25 c unless otherwise noted) parameter symbol limi...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 42.84K  /  5 Page

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    Infineon Technologies A...
Part No. IDW80C65D1
OCR Text ...king package idw80c65d1 650v 2x 40a 1.35v 175c c80ed1 pg-to247-3 a1 c1 c2 a2 a1 a2 c 1 2 3 3 idw80c65d1 emittercontrolleddioderapid1commoncathodeseries rev.2.1,2014-12-10 table of contents description . . . . . . . . . . ....
Description Emitter Controlled Diode Rapid 1 Common Cathode Series

File Size 1,673.74K  /  11 Page

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