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For trench- Found Datasheets File :: 7643    Search Time::1.031ms    
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    SKIM459GD12E4

Semikron International
Part No. SKIM459GD12E4
OCR Text ... Values Unit SKiM(R) 93 Trench IGBT Modules SKiM459GD12E4 Tj = 175 C IFnom Features * IGBT 4 Trench Gate Technology * Solderless sinter technology * VCE(sat) with positive temperature coefficient * Low inductance case * I...
Description Trench IGBT Modules

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    FGA90N33AT

Fairchild Semiconductor
Part No. FGA90N33AT
OCR Text Trench IGBT April 2008 FGA90N33AT 330V, 90A PDP Trench IGBT Features * High current capability * Low saturation voltage: VCE(sat) =1.1V @ IC = 20A * High input impedance * Fast switching * RoHS compliant tm General Descriptio...
Description 330V, 90A PDP Trench IGBT

File Size 607.51K  /  8 Page

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    FGA90N33ATD

Fairchild Semiconductor
Part No. FGA90N33ATD
OCR Text Trench IGBT April 2008 FGA90N33ATD 330V, 90A PDP Trench IGBT Features * High current capability * Low saturation voltage: VCE(sat) =1.1V @ IC = 20A * High input impedance * Fast switching * RoHS compliant tm General Descripti...
Description 330V, 90A PDP Trench IGBT

File Size 636.89K  /  9 Page

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    FGA70N30T

Fairchild Semiconductor
Part No. FGA70N30T
OCR Text Trench IGBT December 2007 FGA70N30T 300V, 70A PDP IGBT Features * High current capability * Low saturation voltage: VCE(sat) =1.5V @ IC = 40A * High input impedance * Fast switching * RoHS complaint tm General Description Usi...
Description 300V, 70A PDP IGBT

File Size 552.10K  /  7 Page

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    PMN42XPE

NXP Semiconductors
Part No. PMN42XPE
OCR Text trench mosfet 14 august 2012 product data sheet scan or click this qr code to view the latest information for this product 1. product profile 1.1 general description p-channel enhancement mode field-effect transistor (fet) in a small sot457...
Description 20 V, single P-channel Trench MOSFET

File Size 199.28K  /  14 Page

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    PMN42XPEA

NXP Semiconductors
Part No. PMN42XPEA
OCR Text trench mosfet 21 march 2014 product data sheet scan or click this qr code to view the latest information for this product 1. general description p-channel enhancement mode field-effect transistor (fet) in a small sot457 (sc-74) surface-moun...
Description 20 V, P-channel Trench MOSFET

File Size 266.54K  /  15 Page

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    KI8205T

Guangdong Kexin Industrial Co.,Ltd
Part No. KI8205T
OCR Text Trench MOSFET KI8205T Unit: mm Features Super high dense cell trench design for low RDS(on). Rugged and reliable. Surface Mount package. 1 pin mark D1 D2 S1 D1/D2 1 2 3 6 5 4 G1 D1/D2 G2 G1 S1 G2 S2 S2 Absolute...
Description Dual N-Channel High Density Trench MOSFET

File Size 42.66K  /  2 Page

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    FDMS3500

Fairchild Semiconductor
Part No. FDMS3500
OCR Text Trench(R) MOSFET April 2008 FDMS3500 N-Channel Power Trench MOSFET 75V, 49A, 14.5m Features Max rDS(on) = 14.5m at VGS = 10V, ID = 11.5A Max rDS(on) = 16.3m at VGS = 4.5V, ID = 10A Advanced Package and Silicon combination for low ...
Description N-Channel Power Trench? MOSFET 75V, 49A, 14.5mΩ
N-Channel Power Trench㈢ MOSFET 75V, 49A, 14.5mヘ

File Size 245.61K  /  7 Page

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    FDMS8460

Fairchild Semiconductor
Part No. FDMS8460
OCR Text Trench(R) MOSFET January 2008 FDMS8460 N-Channel Power Trench MOSFET 40V, 49A, 2.2m Features Max rDS(on) = 2.2m at VGS = 10V, ID = 25A Max rDS(on) = 3.0m at VGS = 4.5V, ID = 21.7A Advanced Package and Silicon combination for low r...
Description N-Channel Power Trench? MOSFET 40V, 49A, 2.2mΩ
N-Channel Power Trench㈢ MOSFET 40V, 49A, 2.2mヘ

File Size 269.13K  /  7 Page

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    FDMC8882

Fairchild Semiconductor
Part No. FDMC8882
OCR Text Trench(R) MOSFET May 2009 FDMC8882 N-Channel Power Trench(R) MOSFET 30 V, 16 A, 14.3 m: Features Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A High performance technology for ...
Description N-Channel Power Trench垄莽 MOSFET 30 V, 16 A, 14.3 m
N-Channel Power Trench? MOSFET 30 V, 16 A, 14.3 m

File Size 215.09K  /  7 Page

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