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    SB10-09T

SANYO[Sanyo Semicon Device]
Part No. SB10-09T
OCR Text ...Cathode 3:Anode 4:Cathode SANYO:tp trr Test Circuit unit:mm 1256A [SB10-09T] 1:No Contact 2:Cathode 3:Anode 4:Cathode Specifications Absolute Maximum Ratings at Ta = 25C Parameter Repetitive Peak Reverse Voltage Nonrepetitive...
Description 90V, 1A Rectifier

File Size 79.41K  /  3 Page

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    C67078-A1309-A3 BUZ80A BUZ80AC67078-S1309-A3

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SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. C67078-A1309-A3 BUZ80A BUZ80AC67078-S1309-A3
OCR Text ...ent thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 A K/W t = 670.0ns p ID 10 1 1 s 10 s ZthJC 10 0 DS (o n) 10 0 = V DS / I D 100 s 10 -1 D = 0.50 1 ms R 0.20 0.10 10 -...
Description From old datasheet system
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode)
TRANSISTOR TO 220 MOSFET N KANAL

File Size 176.70K  /  9 Page

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    IRLU3103 IRLR3103

IRF[International Rectifier]
Part No. IRLU3103 IRLR3103
OCR Text ...O M ID 15 A 2 1A 34 A IAS tp 0.01 300 200 Fig 12a. Unclamped Inductive Test Circuit 100 V(BR)DSS tp VDD VDS 0 VD D = 1 5V 25 50 75 100 125 A 150 Starting T J , Junction Temperature (C) Fig 12c. Maximum...
Description Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A?
Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A)
Power MOSFET(Vdss=30V Rds(on)=0.019ohm Id=46A)
Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A?)

File Size 161.75K  /  10 Page

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    Q62702-F1086 BFR93A

SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1086 BFR93A
OCR Text ...rmissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 ...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)

File Size 57.66K  /  7 Page

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    2SK3351

SANYO[Sanyo Semicon Device]
Part No. 2SK3351
OCR Text ...in 3 : Source 4 : Drain SANYO : tp 1 0.6 0.8 2 3 2.5 1.2 0.85 0.7 5.5 7.0 1.2 0 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : tp-FA 2.3 2.3 2.3 2.3 VDD=15V 10V 0V VIN VIN ID=15A RL=1 ...
Description N CHANNEL MOS SILICON TRANSISTOR

File Size 53.51K  /  4 Page

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    C67078-S1317-A2 BUZ73

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67078-S1317-A2 BUZ73
OCR Text ...ent thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A t = 22.0s p ID /I D DS ZthJC 10 1 100 s 10 0 R DS (o n) =V 1 ms 10 -1 D = 0.50 0.20 10 0 10 ms 0.10 10 -2 single pulse 0.05 0....
Description 30V N-Channel PowerTrench MOSFET
SIPMOS Power Transistor
From old datasheet system

File Size 187.42K  /  9 Page

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    IRFL4105 IRFL4105TR

IRF[International Rectifier]
Part No. IRFL4105 IRFL4105TR
OCR Text ... D RIV E R 200 RG 20 V tp D .U .T IA S + - VD D A 150 0 .01 100 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 50 0 V D D = 25 V 25 50 75 100 125 A 150 S tarting T J , J unc tion T...
Description 3.7 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package

File Size 164.94K  /  9 Page

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    SB30W03T

SANYO[Sanyo Semicon Device]
Part No. SB30W03T
OCR Text ...ucture. trr Test Circuit SANYO:tp 1:Anode 2:Cathode 3:Anode 4:Cathode unit:mm 1257A [SB30W03T] Electrical Connection 1:Anode 2:Cathode 3:Anode 4:Cathode SANYO:tp-FA Specifications Absolute Maximum Ratings at Ta = 25C (Value ...
Description 30V, 3A Rectifier

File Size 81.94K  /  3 Page

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    2SK3280

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SK3280
OCR Text ...in 3 : Source 4 : Drain SANYO : tp unit:mm 2092B [2SK3280] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 1 0.6 0.5 0.8 2 3 2.5 1.2 0 to 0.2 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : T...
Description DC/DC Converter Applications
N-Channel Silicon MOSFET

File Size 43.83K  /  4 Page

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