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H7815 91100 20H00 NSSW206C CSOB4518 08500 SAM4002 BR1010
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  to-247 isowatt218 Datasheet PDF File

For to-247 isowatt218 Found Datasheets File :: 57    Search Time::2ms    
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    ST Microelectronics
Part No. STH7NA90FI
OCR Text to-247/isowatt218 fast power mosfet n typical r ds(on) = 1.05 w n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitance n gate charge minimized n reduced voltage spread...
Description N - CHANNEL POWER MOSFET

File Size 304.84K  /  9 Page

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    ST Microelectronics
Part No. W15NB50
OCR Text ...gh dv/dt capability n 30v gate to source voltage rating n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized d...247 isowatt218 1 2 3 1/9 thermal data to-247 isowatt218 r thj-case thermal resistance junc...
Description Search --To STW15NB50

File Size 145.64K  /  9 Page

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    W5NA100

STMicroelectronics
Part No. W5NA100
OCR Text ...r ds(on) = 2.9 w n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n gate charge minim...247 isowatt218 1 2 3 1 2 3 1/6 thermal data to-247 isowatt218 r thj-case thermal ...
Description Search --To STW5NA100

File Size 100.21K  /  6 Page

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    ST Microelectronics
Part No. STW60N10
OCR Text ...25 w < 0.025 w 60 a 36 a 60 a to-218 isowatt218 absolute maximum ratings ...247 1/11 thermal data to-218/to-247 isowatt218 r thj-case thermal resistance junction-case ...
Description OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

File Size 405.57K  /  11 Page

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    ST Microelectronics
Part No. STW6NA80 STH6NA80FI
OCR Text to-247/isowatt218 fast power mos transistor n typical r ds(on) = 1.8 w n avalance rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n very high current capability n application oriented ch...
Description OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

File Size 406.20K  /  10 Page

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    ST Microelectronics
Part No. STH15NA50FI STW15NA50
OCR Text to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate gharge minimize...247 1/11 thermal data to-218/to-247 isowatt218 r thj-case thermal resistance junction-case ...
Description OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

File Size 428.54K  /  11 Page

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    ST Microelectronics
Part No. STH10NA50FI
OCR Text to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate gharge minimize...247 1/11 thermal data to-218/to-247 isowatt218 r thj-case thermal resistance junction-case ...
Description OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

File Size 405.29K  /  11 Page

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    SGS Thomson Microelectronics
Part No. STH10NK60ZFI
OCR Text to-247/isowatt218 zener-protected supermesh ? power mosfet n typical r ds (on) = 0.65 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n very low intrinsic capacitances n very good manufacturing repeatibil...
Description N-CHANNEL 600V 0.65 OHM 10A ZENER-PROTECTED SUPERMESH POWER MOSFET

File Size 255.28K  /  16 Page

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    STMicroelectronics N.V.
Part No. STH18NB40FI
OCR Text to-247/isowatt218 powermesh ? mosfet preliminary data n typical r ds(on) = 0.19 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description ...
Description N-Channel 400V-0.19Ω-18.4A- to-247/isowatt218 PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.19Ω- 18.4A - to-247/isowatt218 PowerMESHTM MOSFET的(不适用沟道MOSFET的)

File Size 72.82K  /  6 Page

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    ST Microelectronics
Part No. STH12NA60FI
OCR Text to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate gharge minimize...247 1/11 thermal data to-218/to-247 isowatt218 r thj-case thermal resistance junction-case ...
Description OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

File Size 422.43K  /  11 Page

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