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74435 SC815 B4406 L7905 2SA1943 STRF6672 400SJ STV7617U
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  pseudomorphic Datasheet PDF File

For pseudomorphic Found Datasheets File :: 275    Search Time::1.328ms    
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    Agilent
Part No. ATF-58143
OCR Text pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features * Low noise and high linearity performance * Enhancement Mode Technology [1] * Excellent uniformity in product specifications Description Agilent Technologies's ATF...
Description pseudomorphic HEMT
From old datasheet system

File Size 106.83K  /  9 Page

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    Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-35143-TR1 ATF-35143-TR2 ATF-35143 ATF-35143-BLK
OCR Text pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-35143 Features * Low Noise Figure * Excellent Uniformity in Product Specifications * Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70) * Tape...
Description Low Noise pseudomorphic HEMT in a Surface Mount Plastic Package

File Size 116.01K  /  19 Page

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    Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-35143-TR2 ATF-35143-BLK ATF-35143 ATF35143 ATF-35143-TR1
OCR Text pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-35143 Features * Low Noise Figure * Excellent Uniformity in Product Specifications * Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70) * Tape...
Description Low Noise pseudomorphic HEMT in a Surface Mount Plastic Package

File Size 192.24K  /  19 Page

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    LP3000SOT89-3 LP3000SOT89 LP3000SOT89-1 LP3000SOT89-2

FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP3000SOT89-3 LP3000SOT89 LP3000SOT89-1 LP3000SOT89-2
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 3000 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasi...
Description LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

File Size 43.62K  /  3 Page

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    ATF-511P8-BLK ATF-511P8-TR2 ATF-511P8-TR1 ATF-511P8

Agilent Technologies, Inc.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-511P8-BLK ATF-511P8-TR2 ATF-511P8-TR1 ATF-511P8
OCR Text pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features * Single voltage operation * High linearity and P1dB * Low noise figure Description Agilent Technologies's ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT ...
Description C BAND, Si, N-CHANNEL, RF POWER, HEMFET 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
High Linearity Enhancement Mode
ATF-511P8 · Single Voltage E-pHEMT Low Noise 41.7 dBm OIP3 in LPCC

File Size 136.57K  /  16 Page

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    FP1510SOT89

FILTRONIC[Filtronic Compound Semiconductors]
Part No. FP1510SOT89
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.10 m x 1500 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasi...
Description LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

File Size 136.74K  /  3 Page

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    MRF9822T1

Motorola, Inc
Part No. MRF9822T1
OCR Text ... POWER TRANSISTOR GaAs PHEMT pseudomorphic High Electron Mobility Transistor Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. * Performance Specifications a...
Description
File Size 65.02K  /  4 Page

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    FPD7612P70

FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD7612P70
OCR Text ...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 200 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. . The FPD7612 is also available in die f...
Description HI-FREQUENCY PACKAGED PHEMT

File Size 187.90K  /  3 Page

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    FPD7612

Filtronic Compound Semiconductors
Part No. FPD7612
OCR Text ...The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 200 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure mi...
Description GENERAL PURPOSE PHEMT

File Size 187.75K  /  2 Page

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    Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP7612P70
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate...
Description PACKAGED HIGH DYNAMIC RANGE PHEMT

File Size 60.15K  /  3 Page

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For pseudomorphic Found Datasheets File :: 275    Search Time::1.328ms    
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