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For n-ch p-ch Found Datasheets File :: 20107 Search Time::2ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ471
OCR Text	...imited by R DS(on) Ta = 25 C n tio ra pe O sh ) ) (T c = 25 C 0 50 100 150 200 Case Temperature Tc (C) ...ch - c(t) = s (t) * ch - c ch - c = 4.17 C/W, Tc = 25 C PDM PW T D= 0.03 0.01 10 0....
Description	Silicon P Channel DV-L MOS FET High Speed Power Switching
File Size	46.25K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ479 2SJ479L 2SJ479S
OCR Text	...imited by R DS(on) Ta = 25 C n tio ra pe O (1 ot ) (T c = 25 C ) 0 50 100 150 200 Case Temperature Tc (C...ch - c(t) = s (t) * ch - c ch - c = 2.5 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu h...
Description	Power switching MOSFET Silicon P Channel DV-L MOS FET High Speed Power Switching Silicon P Channel DVL MOS FET High Speed Power Switching
File Size	37.54K / 7 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text	...Drain Current - A -100 S( o n) -10 RD t VG (a d ite V) Lim 10 = ID(DC) S Po 10 ipa Pw ID(pulse) = 1 0 10 s 0 s 1 m s ...ch-a)= 83.3 C/W 10 Rth(ch-c)= 1.79 C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100 m ...
Description	From old datasheet system SWITCHING p-chANNEL POWER MOS FET INDUSTRIAL USE
File Size	70.31K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ493 D11265EJ3V0DS00
OCR Text	... Single Pulse d -1 -0.1 -1 -10 n) Pw = 10 ID(pulse) s 10 0 s 1 m s ID - Drain Current - A -80 -60 -40 -20 -4 -8 -4 V -100 ...ch-a)= 62.5 C/W 10 Rth(ch-c)= 4.17 C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100 m ...
Description	From old datasheet system SWITCHING p-chANNEL POWER MOS FET INDUSTRIAL USE
File Size	64.87K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ494 D11266EJ2V0DS00
OCR Text	...on) Date Published January 1998 N CP(K) Printed in Japan (c) 1998 2SJ494 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS D...ch-a) = 62.5 C/W 10 Rth(ch-c) = 3.57 C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100...
Description	From old datasheet system SWITCHING p-chANNEL POWER MOS FET INDUSTRIAL USE
File Size	68.73K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text	...n) Date Published November 1997 N Printed in Japan 12.0 0.2 RDS(on)1 = 30 m MAX. (VGS = -10 V, ID = -15 A) 15.0 0.3 (c) 199...ch-a) = 62.5C/W 10 Rth(ch-c) = 3.57C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m...
Description	From old datasheet system MOS Field Effect Power Transistors SWITCHING p-chANNEL POWER MOS FET INDUSTRIAL USE
File Size	72.23K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ506 2SJ506L 2SJ506S
OCR Text	... 0m s( 1s er ho ati (T o t) c= n 25 C ) 0 1 m s s 0 50 100 150 Tc (C) 200 -0.1 -0.2 -5 -10 -20 -50 Case Tempe...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	49.71K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ529 2SJ529L 2SJ529S
OCR Text	... 20 ra s tio (1 n (T sh c= ot ) 10 25 C ) 0 50 100 150 Tc (C) 200 Case Temperature...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	51.89K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor Hitachi Semiconductor
Part No.	2SJ539
OCR Text	...PW D =1 C O 0m pe s ra (1 tio s n ho (T t) c= 25 Operation in 0 s 1 m s 20 this area is limited by R DS(on) 0 50 ...ch - c(t) = s (t) * ch - c ch - c = 3.12 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.99K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ540
OCR Text	... R DS(on) ra tio (1 n sh 0 50 100 150 Tc (C) 200 Case Temperature -0.2 -0.1 Ta = 25 C -0.1 -0.3 -1 -3 -1...ch - c(t) = s (t) * ch - c ch - c = 2.5 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o...
Description	Silicon p-channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.52K / 9 Page	View it Online	Download Datasheet

For n-ch p-ch Found Datasheets File :: 20107 Search Time::2ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |