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STMicroelectronics
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| Part No. |
STI24N60M2 STW24N60M2 STB24N60M2 STP24N60M2
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| OCR Text |
...nnel 600 v, 0.168 typ., 18 a mdmesh ii plus? low q g power mosfet in d 2 pak, i 2 pak, to-220 and to-247 packages datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) ... |
| Description |
N-channel 600 V, 0.168 typ., 18 a mdmesh II Plus low Qg Power MOSFET in D2PaK
N-channel 600 V, 0.168 Ω typ., 18 a mdmesh II Plus?low Qg Power MOSFET in D2PaK, I2PaK, TO-220 and TO-247 packages
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| File Size |
1,548.24K /
22 Page |
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ST Microelectronics
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| Part No. |
STP21NM50N
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| OCR Text |
... 2 pak/to-247 second generation mdmesh? mosfet table 1: general features 100% avalanche tested low input capacitance and gate charge lo...a new vertical struc - ture to the company's strip layout to yield one of the world's lowest on-res... |
| Description |
N-CHaNNEL POWER MOSFET
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| File Size |
436.95K /
16 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB11NM80T4 STF11NM80
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| OCR Text |
mdmesh? mosfet table 1: general features typical r ds (on) = 0.35 ? low gate input resistance low input capacitance and gate charge ...a 11 a 11 a 11 a 1 2 3 1 3 1 2 3 1 2 3 to-220 d 2 pak to-247 to-220fp sales type marking package pac... |
| Description |
N-CHaNNEL 800 V - 0.35 OHM - 11 a TO-220/TO-220FP/D2PaK/TO-247 mdmesh MOSFET
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| File Size |
363.08K /
14 Page |
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ST Microelectronics
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| Part No. |
STD5NM60T4
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| OCR Text |
mdmesh? power mosfet n typical r ds (on) = 0.9 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and...a new revolutionary mosfet technology that associates the multiple drain pro- cess with the companys... |
| Description |
N-CHaNNEL 650V @Tjmax- 0.9 OHM - 8a TO-220/TO-220FP/DPaK/IPaK mdmesh POWER MOSFET
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| File Size |
593.36K /
13 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB25NM50N STP25NM50N STB25NM50NT4 STW25NM50N STF25NM50N STB25NM50N-1
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| OCR Text |
.../i2pak/to-247 second generation mdmesh? mosfet table 1: general features world?s lowest on resistance typical r ds (on) = 0.12 ? high ...a new vertical struc- ture to the company's strip layout to yield the world's lowest on-resistance a... |
| Description |
N-CHaNNEL 550V @ TjMaX - 0.12 Ohm - 21.5 a TO-220/TO-220FP/D2PaK/I2PaK/TO-247 SECOND GENERaTION mdmesh MOSFET
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| File Size |
231.24K /
12 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD3NM50T4
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| OCR Text |
mdmesh? mosfet typical r ds (on) = 2.5 ? high dv/dt and avalanche capabilities improved esd capability low input capacitance and g...a new revolutionary mosfet technology that associates the multiple drain pro- cess with the company?... |
| Description |
N-CHaNNEL 550V @Tjmax - 2.5 OHM - 3a DPaK/IPaK ZENER-PROTECTED mdmesh POWER MOSFET
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| File Size |
270.97K /
10 Page |
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ST Microelectronics
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| Part No. |
STD5NM50T4
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| OCR Text |
mdmesh?power mosfet (1) i sd 5a, di/dt 400a/s, v dd v (br)dss , t j t jmax. n typical r ds (on) = 0.7 w n high dv/dt and aval...a new revolutionary mosfet technology that associates the multiple drain pro- cess with the companys... |
| Description |
N-CHaNNEL 550V @Tjmax - 0.7 OHM - 7.5a DPaK/IPaK mdmesh POWER MOSFET
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| File Size |
421.21K /
10 Page |
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ST Microelectronics
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| Part No. |
STW14NM50
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| OCR Text |
...nel 500v - 0.32 w - 14a to-247 mdmesh?power mosfet n typical r ds (on) = 0.32 w n high dv/dt and avalanche capabilities n 100% avalanche te...a new revolutionary mosfet technology that associates the multiple drain pro- cess with the companys... |
| Description |
N-CHaNNEL 500V - 0.32 OHM - 14a TO-247 mdmesh POWER MOSFET
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| File Size |
53.42K /
5 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW45NM60
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| OCR Text |
mdmesh?power mosfet n typical r ds (on) = 0.09 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and...a new revolutionary mosfet technology that associates the multiple drain pro- cess with the companys... |
| Description |
N-CHaNNEL MOSFET
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| File Size |
208.55K /
8 Page |
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it Online |
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