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For juction Found Datasheets File :: 291    Search Time::1.344ms    
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    IRGSL14C40LPBF IRGS14C40LPBF IRGB14C40LPBF

IRF[International Rectifier]
Part No. IRGSL14C40LPBF IRGS14C40LPBF IRGB14C40LPBF
OCR Text ...e) Transient Thermal Impedance, juction-to-Case (Fig.11) Page 1 11/19/04 Ignition IGBT Parameter BVCES Collector-to-Emitter Breakdown Voltage BVGES Gate-to-Emitter Breakdown Voltage I CES Collector-to-Emitter Leakage Current 24 10 2...
Description IGBT with on-chip Gate-Emitter and Gate-Collector clamps

File Size 285.75K  /  11 Page

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    IRL2505PBF

International Rectifier
Part No. IRL2505PBF
OCR Text ...-to-Sink, Flat, Greased Surface juction-to-Ambient Typ. --- 0.50 --- Max. 0.75 --- 62 Units C/W www.irf.com 1 8/3/04 IRL2505PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-So...
Description HEXFET Power MOSFET

File Size 217.24K  /  8 Page

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    B5A45VIC

Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
Part No. B5A45VIC
OCR Text ...VRRM=Rated IF=1.0A, di/dt=-20A/ juction to Case MIN. TYP. 0.50 MAX. 0.55 0.5 35 4.0 UNIT V mA ns /W VFM IRRM trr SYMBOL Rth(j-c) 1999. 9. 16 Revision No : 0 P 1/2 B5A45VIC I F - VF 1.0 5.0 0 C I R - VR 100 REVE...
Description Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY/ CONVERTER & CHOPPER)
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER) 肖特基型二极管堆栈(开关式电源,转换器

File Size 70.24K  /  2 Page

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    THN5602F

Tachyonics CO,. LTD
Part No. THN5602F
OCR Text ...n Storage Temperature Operating juction Temperature Ts = 60E ; note 1 CONDITION Open Emitter Open Base Open Collector VALUE 20 8 4 350 1 -65 ~ 150 E E 150 UNIT V V V mA W Sep-203 www.tachyonics.co.kr -1/6 Rev1.1 THN5602F a THERM...
Description NPN SiGe RF POWER TRANSISTOR

File Size 286.29K  /  6 Page

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    CTN368 CTN369

Continental Device India Limited
Part No. CTN368 CTN369
OCR Text ...MAL RESISTANCE Junction to Case juction to Ambient Rth(j-c) Rth(j-a) 45 156 C/W C/W VALUE 25 20 5 1 1.0 6.4 2.75 22 -55 to +150 UNIT V V V A W mW/C W mW/C C ELECTRICAL CHARACTERISTICS (Ta=25 C unless specified otherwise ) DESCRIPTION SYM...
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS

File Size 146.66K  /  3 Page

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