...n time Storage time Fall time
*h
FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
1
Power Transistors
PC -- Ta
...v)
-10
vCE(sat) -- IC
(1) IC/IB=10 (2) IC/IB=20 TC=25C
Collector power dissipation PC (W)
...
Description
FILTER PLATE 10 A, 80 v, PNP, Si, POWER TRANSISTOR Silicon PNP epitaxial planar type(For power switching)
...n time Storage time Fall time
*h
FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
1
Power Transistors
PC -- Ta
...v)
-10
vCE(sat) -- IC
(1) IC/IB=10 (2) IC/IB=20 TC=25C
Collector power dissipation PC (W)
...
Description
Silicon PNP epitaxial planar type(For power switching)
...n time Storage time Fall time
*h FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
Note: Ordering can be made by the com...v)
-10
vCE(sat) -- IC
(1) IC/IB=10 (2) IC/IB=20 TC=25C
Collector power dissipation PC (W)
...
Description
Silicon PNP epitaxial planar type(For power switching)
...) and 2SB566A(K) are grouped by h FE1 as follows. C 100 to 200
2
2SB566(K), 2SB566A(K)
Maximum Collector Dissipation Curve Area Safe ...v, -0.22 A) 2SB566 K (-60 v, -0.15 A) 2SB566A K -2 -5 -10 -20 -50 -100 Collector to emitter voltage ...
...p max -1 -1 Unit nA A v v v
*h
FE
Rank classification
Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 hFE
Rank
4.10.2
4.50.1
7
1
Transistor
PC -- Ta
500 -60 Ta=25C 450 -50 IB=-300A -250A -40 -200A -30 -50
2SB642
IC -- ...
...B647 and 2SB647A are grouped by h FE1 as follows. 2. Pulse test B 2SB647 2SB647A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 --...v)
Typical Transfer Characteristics -500 DC current transfer ratio hFE -200 Collector current IC ...
...B649 and 2SB649A are grouped by h FE1 as follows. 2. Pulse test B 2SB649 2SB649A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 --...v, -0.5 A) -0.3 -0.1 DC Operation (TC = 25C) (-13.3 v, -1.5 A)
Area of Safe Operation
20
10...