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MicroWave Technology, Inc.
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| Part No. |
MPS-1820A9-82
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| OCR Text |
... volt bias 26% high power added effeciency features features specifications specifications electrical at 25 c, vdd= 6.0 v, zo= 50 symbol parameter min. typical max unit freq ssg p1db ip3 nf vswr gof... |
| Description |
1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 10 PIN
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| File Size |
126.51K /
2 Page |
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International Rectifier, Corp.
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| Part No. |
IRMDAC3
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| OCR Text |
...0 [38.1] capacitor
figure 8: effeciency maximization charts extract from module data sheet irmdac3 reference design data sheet (october 1998)
irmdac3 reference design data sheet (october 1998) r s t n rp p g7 is4 is3 br is1 is2 g1 ... |
| Description |
Reference Design Kit: 3-Phase 460VAC 3HP Motor Drive 参考设计工具包：三460VAC功率3HP电机驱动
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| File Size |
94.50K /
9 Page |
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STMicroelectronics N.V.
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| Part No. |
BAR42FILM
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| OCR Text |
...** tp = 5 ms, d <2% * detection effeciency
bar42film bar43/a/c/sfilm 3/4 0 5 10 15 20 25 30 1e-2 1e-1 1e+0 1e+1 1e+2 vr(v) ir( m a) tj=50 c tj=25 c tj=100 c fig. 2: reverse leakage current versus reverse voltage applied (typical values... |
| Description |
SMALL SIGNAL SCHOTTKY DIODES 小信号肖特基二极
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| File Size |
52.39K /
4 Page |
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it Online |
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STMICROELECTRONICS
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| Part No. |
BAR43C BAR42
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| OCR Text |
...** tp = 5 ms, d <2% * detection effeciency
bar 42/bar 43, a, c, s 3/4 0 5 10 15 20 25 30 1e-2 1e-1 1e+0 1e+1 1e+2 vr(v) ir( m a) tj=50 c tj=25 c tj=100 c fig. 2: reverse leakage current versus reverse voltage applied (typical values). ... |
| Description |
0.1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, 30 V, SILICON, SIGNAL DIODE
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| File Size |
53.05K /
4 Page |
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it Online |
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