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  cgs Datasheet PDF File

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    Mallory Sonalert Products, Inc.
Part No. cgs622T300W5L
OCR Text ...08)996-3830 www.cde.com type cgs high-cap screw terminal aluminum electrolytic capacitor high cv, screw terminal capacitors type cgs screw terminal, aluminum electrolytic ca- pacitors have a high cv rating and are suitable for use ...
Description
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    SD210DE SST823 SST824 SD5001N SD5401CY SST215

LINEAR[Linear Integrated Systems]
Part No. SD210DE SST823 SST824 SD5001N SD5401CY SST215
OCR Text ... leakage current will flow. G cgs CGD cgs + Source G rDS(on) CGD S + DS D The DMOS field-effect transistor (FET) is normally off when the gate-to-source voltage (VGS) is 0 V. The lateral DMOS transistor, shown in cro...
Description Voltage Regulator IC; Package/Case:5-SOT-23; Output Current:150mA; Output Voltage:2.9V; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.9V RoHS Compliant: No
Voltage Regulator IC; Output Current:150mA; Output Voltage:2.8V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process
HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

File Size 353.61K  /  11 Page

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    MACOM[Tyco Electronics]
Part No. MRF154
OCR Text ...ain (Cgd), and gate-to- source (cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and rever...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 172.12K  /  7 Page

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    MACOM[Tyco Electronics]
Part No. MRF157
OCR Text ...ain (Cgd), and gate-to- source (cgs). The PN junction formed during the fabrication of the TMOS(R) FET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and rev...
Description MOS LINEAR RF POWER FET

File Size 187.23K  /  7 Page

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    TC1101

List of Unclassifed Manufacturers
ETC[ETC]
Part No. TC1101
OCR Text ...V, IDS = 10 mA SCHEMATIC Lg Rg cgs Ri T Cgd Gm Cds Rds Rd Ld PARAMETERS Parameters Lg Rg cgs Ri Cgd Gm T 0.04708 nH Parameters Rs Cds Rd Ld 1.29 Ohm 0.001 nH 0.0684 pF 321.5 Ohm 1.525 Ohm 0.0379 nH 1.46 Ohm Ls 0.207 pF 3.68 Ohm Rds 0.0...
Description Low Noise and Medium Power GaAs FETs

File Size 149.21K  /  6 Page

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    MRF176 MRF176GU MRF176GV

MOTOROLA[Motorola, Inc]
Part No. MRF176 MRF176GU MRF176GV
OCR Text ...ain (Cgd), and gate-to- source (cgs). The PN junction formed during the fabrication of the MOSFET results in a junction capacitance from drain- to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse...
Description N-CHANNEL MOS BROADBAND RF POWER FETs

File Size 176.10K  /  10 Page

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    MRF175LV MRF175LU

MACOM[Tyco Electronics]
Part No. MRF175LV MRF175LU
OCR Text ...ain (Cgd), and gate-to- source (cgs). The PN junction formed during the fabrication of the FET results in a junction capacitance from drain-to- source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse tr...
Description N-CHANNEL BROADBAND RF POWER FETs

File Size 143.35K  /  8 Page

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