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Microsemi
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Part No. |
MSAHZ52F120A
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OCR Text |
... max. unit collector-to-emitter breakdown voltage (gate shorted to emitter) @ t j 3 25 c bv ces 1200 volts collector-to-gate breakdown voltage @ t j 3 25 c, r gs = 1 m w bv cgr 1200 volts continuous gate-to-emitter voltage v ges +/... |
Description |
Insulated Gate Bipolar Transistor
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File Size |
51.74K /
2 Page |
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it Online |
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MICROSEMI POWER PRODUCTS GROUP
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Part No. |
APT6010B2LLG
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OCR Text |
... / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 27a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (... |
Description |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
160.55K /
5 Page |
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it Online |
Download Datasheet |
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Silan Microelectronics
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Part No. |
SVD8N80T
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OCR Text |
...yp. max. unit drain -source breakdown voltage b vdss vgs=0v, id=250a 800 -- -- v drain-source leakage current i dss vds=800v, vgs=0v -- -- 10 a gate-source leakage current i gss vgs=30v, vds=0v -- -- 100 na gate... |
Description |
800V N-CHANNEL MOSFET
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File Size |
560.64K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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