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  800v us Datasheet PDF File

For 800v us Found Datasheets File :: 950    Search Time::1.156ms    
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    RE0208DA

Sanyo Semicon Device
Part No. RE0208DA
OCR Text ...very Diode for Flash Circuit 800v, 200mA Rectifier Voltage rectification for flash circuit etc. Features * * * High voltage (VR...us prior to the intended use. If there is no consultation or inquiry before the intended use, our cu...
Description Fast Recovery Diode for Flash Circuit 800v, 200mA Rectifier

File Size 64.01K  /  3 Page

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MICROSEMI[Microsemi Corporation]
Part No. APTM120H29FG
OCR Text ...itching @ 125C VGS = 15V VBus = 800v ID = 34A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 800v ID = 34A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 800v ID = 34A, R G = 2.5 Min Typ 10.3 1.54 0.26 374 48 240 20 15...
Description Full - Bridge MOSFET Power Module

File Size 282.82K  /  6 Page

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    ADPOW[Advanced Power Technology]
Part No. APTM120A29FT
OCR Text ...itching @ 125C VGS = 15V VBus = 800v ID = 34A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 800v ID = 34A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 800v ID = 34A, R G = 2.5 Min Typ 10.3 1.54 0.26 374 48 240 20 15...
Description Phase Leg MOSFET Power Module

File Size 310.23K  /  6 Page

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    Microsemi
Part No. APT30D120BCTG
OCR Text ...a, di f /dt = -200a/ s v r = 800v, t c = 25 c i f = 30a, di f /dt = -200a/ s v r = 800v, t c = 125 c i f = 30a, di f /dt = -1...us and foreign patents pending. all rights reserved. 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of di...
Description High Voltage Fast Recovery Diode

File Size 96.85K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APTM120A29FTG
OCR Text ...itching @ 125C VGS = 15V VBus = 800v ID = 34A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 800v ID = 34A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 800v ID = 34A, R G = 2.5 Min Typ 10.3 1.54 0.26 374 48 240 20 15...
Description Phase Leg MOSFET Power Module

File Size 286.52K  /  6 Page

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    APT30DQ120K APT30DQ120KG

Microsemi Corporation
Part No. APT30DQ120K APT30DQ120KG
OCR Text ...C TJ = 175C 600 T = 125C J V = 800v R APT30DQ120K(G) 60A 500 400 30A 300 15A 200 TJ = -55C 100 0 1 2 3 4 5 VF, ANODE-TO...us and Foreign patents pending. All Rights Reserved. ...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 96.44K  /  4 Page

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    Microsemi
Part No. APT8014L2FLLG
OCR Text ...voltage drain current (v ds = 800v, v gs = 0v) zero gate voltage drain current (v ds = 640v, v gs = 0v, t c = 125c) gate-source leaka...us and foreign patents pending. all rights reserved. figure 18, turn-on switching waveforms and def...
Description FREDFETs

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    Microsemi
Part No. APT1201R2SFLLG APT1201R2BFLLG
OCR Text ...tive switching @ 25c v dd = 800v, v gs = 15v i d = 12a, r g = 5 ? inductive switching @ 125c v dd = 800v, v gs = 15v i d...us and foreign patents pending. all rights reserved. figure 18, turn-on switching waveforms and def...
Description FREDFETs

File Size 154.80K  /  5 Page

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    IRG4PH50UD IRG4PH50

IRF[International Rectifier]
Part No. IRG4PH50UD IRG4PH50
OCR Text ... TJ = 25C -- ns IC = 24A, VCC = 800v 170 VGE = 15V, RG = 5.0 260 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. ...us PULSE WIDTH GE IC = 48 A Maximum DC Collector Current(A) 3.5 30 IC = 24 A 3.0 ...
Description 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)

File Size 226.41K  /  10 Page

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    G4PH50UD

International Rectifier
Part No. G4PH50UD
OCR Text ... TJ = 25C -- ns IC = 24A, VCC = 800v 170 VGE = 15V, RG = 5.0 260 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. ...us PULSE WIDTH GE IC = 48 A Maximum DC Collector Current(A) 3.5 www.DataSheet4U.com ...
Description Search --To IRG4PH50UD

File Size 263.88K  /  10 Page

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