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![IRFL4310 IRFL4310TR](Maker_logo/international_rectifier.GIF)
IRF[International Rectifier]
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Part No. |
IRFL4310 IRFL4310TR
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OCR Text |
... nC V DS = VGS, ID = 250A VDS = 50V, ID = 0.80 A V DS = 100V, V GS = 0V V DS = 80V, VGS = 0V, TJ = 125C V GS = 20V V GS = -20V I D = 1.6A VD...013) 0.25 (.010)
TR
2.05 (.080) 1.95 (.077)
7.55 (.297) 7.45 (.294)
7.60 (.299) 7.40 (.292... |
Description |
HEXFET? Power MOSFET 1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A) 100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
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File Size |
310.61K /
9 Page |
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it Online |
Download Datasheet
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![PTF10137](Maker_logo/ericsson.GIF)
ERICSSON[Ericsson] Ericsson Microelectronics
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Part No. |
PTF10137
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OCR Text |
...Key P4525-ND Capacitor, 0.1 mF, 50V Digi-Key P5182-ND Capacitor, 100 mF, 50V ATC 100 B 2.0 pF Capacitor, ATC 100 B Digi-Key 2.2 QBK Resistor, 220 W, 1/4W N/A 4 Turn, 20 AWG, .120 I.D. .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200... |
Description |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦,1.0 GHz的GOLDMOS场效应晶体管 12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
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File Size |
174.57K /
6 Page |
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it Online |
Download Datasheet
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Price and Availability
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