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400v 4a Datasheet PDF File

For 400v 4a Found Datasheets File :: 1354 Search Time::2.422ms
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				Sanyo
Part No.	2SC3459 0330
OCR Text	...B2=0.4a, L=2mH, clamped ton VCC=400v, 5IB1=-2.5IB2=IC=3A, RL=133 tstg tf VCC=400v, 5IB1=-2.5IB2=IC=3A, RL=133 VCC=400v, 5IB1=-2.5IB2=IC=3A, RL=133 Switching Time Test Circuit No.1591-2/4 2SC3459 No.1591-3/4 2SC3459 Specifi...
Description	NPN Triple Diffused Planar Silicon Transistor 800V/4.5A Switching Regulator Applications From old datasheet system
File Size	108.60K / 4 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOD9N40
OCR Text	400v,8a n-channel mosfet 500v@150 i d (at v gs =10v) 8a r ds(on) (at v gs =10v) <0.8 ? symbol v ds v gs i dm i ar e ar e as peak ...4a v ds =0v, v gs =30v v gs =10v, i d =4a i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =15...
Description	400v,8A N-Channel MOSFET
File Size	513.61K / 6 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	BUV42A
OCR Text	...ollector cutoff current v ce = 400v;r be = 10 v ce = 400v;r be = 10 ;t c =100 0.5 2.5 ma i cev collector cutoff current v ce = 400v;v be = -1.5v v ce = 400v;v be = -1.5v;t c =100 0.5 2.0 ma i ebo emitter cutoff current ...
Description	isc Silicon NPN Power Transistor
File Size	48.85K / 2 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SC4429
OCR Text	...1=1.2A, IB2=-2.4a, RL=66.7, VCC=400v tstg tf IC=6A, IB1=1.2A, IC=6A, IB1=1.2A, IB2=-2.4a, RL=66.7, IB2=-2.4a, RL=66.7, VCC=400v VCC=400v Switching Time Test Circuit No.2852-2/4 2SC4429 No.2852-3/4 2SC4429 Specifications of...
Description	NPN Triple Diffused Planar Silicon Transistor 800V/8A Switching Regulator Applications
File Size	105.91K / 4 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FRM440D FRM440H FRM440R FN3235
OCR Text	... -20V VDS = 500V, VGS = 0 VDS = 400v, VGS = 0 VDS = 400v, VGS = 0, TC = +125oC Time = 20s VGS = 10V, ID = 6A VGS = 10V, ID = 4a VDD = 250V, ID = 6A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 (See Test Circuit) MIN 500 2.0 2 32 65 3 ...
Description	6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs From old datasheet system 6A/ 500V/ 1.40 Ohm/ Rad Hard/ N-Channel Power MOSFETs
File Size	46.71K / 6 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STIL06T5 STIL08T5 STIL STIL04P5 STIL04-P5 STIL04T5 STIL04-T5 STIL06-T5 STIL08-T5
OCR Text	... IPt2 = open T = 150C j VRout = 400v T = 150C IPt1 = IPt2 = 10mA j Vt0 Iout(AV) = 4a Threshold direct voltage for one Iout(AV) = 6A power switch Iout(AV) = 8A Dynamic resistance for one power switch Iout(AV) = 4a Iout(AV) = 6A Iout(AV...
Description	AC INRUSH CURRENT LIMITER
File Size	150.23K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKB02N6007
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 118) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 2...4a 3A 2A 1A 0A 25C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50C 75C 100C 125C...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	1,149.10K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4714 IKP04N60T
OCR Text	... 260 V s W C VGE = 15V, VCC 400v, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering tempe...4a T j = 25 C T j = 17 5 C Diode forward voltage VF V G E = 0V, I F = 4a T j = 25 C T j = 17 5 C Gat...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	358.64K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGB02N6006
OCR Text	...gy e ts t j =25 c, v cc =400v, i c =2a, v ge =0/15v, r g =118 ? , l 1) =180nh, c 1) =180pf energy losses include ?tail? an...4a 6a 8a 10a 12a 14a 16a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0 .01a 0....
Description	Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
File Size	791.51K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGB04N60 SGB04N6006
OCR Text	...gy e ts t j =25 c, v cc =400v, i c =4a, v ge =0/15v, r g =67 ? , l 1) =180nh, c 1) =180pf energy losses include ?tail? and diode reverse recovery. - 0.131 0.160 mj switching characteristic, inductive load, at t j ...
Description	Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
File Size	785.93K / 11 Page	View it Online	Download Datasheet

For 400v 4a Found Datasheets File :: 1354 Search Time::2.422ms
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