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  320v Datasheet PDF File

For 320v Found Datasheets File :: 704    Search Time::1.281ms    
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    IR2131

IRF[International Rectifier]
Part No. IR2131
OCR Text ... Temperature (C) 45 40 320v 40 320v 35 160V 35 160V 30 0V 30 0V 25 25 20 1E+2 1E+3 Frequency (Hz) 1E+4 1E+5 20 1E+2 1E+3 Frequency (Hz) 1E+4 1E+5 Figure 7. IR2131 TJ vs. Freq...
Description 3 HIGH SIDE AND 3 LOW SIDE DRIVER

File Size 248.96K  /  8 Page

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    IR2131S IR2131STR IR2131J IR2131JTR

Fairchild Semiconductor, Corp.
International Rectifier
Part No. IR2131S IR2131STR IR2131J IR2131JTR
OCR Text ... Temperature (C) 45 40 320v 40 320v 35 160V 35 160V 30 0V 30 0V 25 25 20 1E+2 1E+3 Frequency (Hz) 1E+4 1E+5 20 1E+2 1E+3 Frequency (Hz) 1E+4 1E+5 Figure 7. IR2131 TJ vs. Freq...
Description 3 Phase Driver. Inverting Input. Independent High and Low Side. 700ns Deadtime in a 28-lead SOIC package 3相驱动程序。反相输入。独立的高端和低端。死区时00ns28引脚SOIC封装
3 Phase Driver, Inverting Input, Independent High and Low Side, 700ns Deadtime in a mod. 44-lead PLCC package
3 Phase Driver, Inverting Input, Independent High and Low Side, 700ns Deadtime in a 28-pin DIP package
3 Phase Driver, Inverting Input, Independent High and Low Side, 700ns Deadtime in a 28-lead SOIC package

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    JILIN SINO-MICROELECTRONICS CO., LTD.
http://
Part No. JCS740F-O-F-N-B JCS740C-O-C-N-B JCS740S-O-S-N-B JCS740B-O-B-N-B
OCR Text ...5 TJ VDS=400V,VGS=0V, TC=25 VDS=320v, IGSSF VDS=0V, TC=125 - 0.4 - V/ IDSS - - 10 100 100 A A nA VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=5.0A VDS = 40V, ID=...
Description N-CHANNEL MOSFET

File Size 1,252.24K  /  12 Page

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    FDPF19N40

Fairchild Semiconductor
Part No. FDPF19N40
OCR Text ...0v, v gs = 0v - - 1 a v ds = 320v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resista...
Description N-Channel MOSFET

File Size 290.33K  /  9 Page

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    IRFP360LC

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP360LC
OCR Text ...DS = 400V, VGS = 0V A 250 VDS = 320v, VGS = 0V, T J = 125C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 23A 28 nC VDS = 320v 45 VGS = 10V, See Fig. 6 and 13 --- VDD = 200V --- ID = 23A ns --- RG = 4.3 --- RD = 7.9, See Fig. 10 Between lead, --...
Description Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A) 功率MOSFET(减振钢板基本\u003d00V,的Rdson)\u003d 0.20ohm,身份证\u003d 23A条)

File Size 298.23K  /  8 Page

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    Linear Technology, Corp.
Linear Technology Corporation
Part No. LT3420 LT3420EMSTRPBF LT3420-1
OCR Text ...r supplies n charges 220 m f to 320v in 3.7 seconds from 5v (lt3420) n charges 100 m f to 320v in 3.5 seconds from 5v (lt3420-1) n charges any size photoflash capacitor n supports operation from two aa cells or any supply from 1.8v to 16v n...
Description    Photoflash Capacitor Chargers with Automatic Refresh
Photoflash Capacitor Chargers with Automatic Refresh; Package: MSOP; No of Pins: 10; Temperature Range: -40&deg;C to 125&deg;C SPECIALTY ANALOG CIRCUIT, PDSO10

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    STP11NK40Z STP11NK40ZFP STB11NK40Z STB11NK40Z09 STB11NK40ZT4

STMicroelectronics
Part No. STP11NK40Z STP11NK40ZFP STB11NK40Z STB11NK40Z09 STB11NK40ZT4
OCR Text ...pacitance v gs =0, v ds =0v to 320v -78 -pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =320v, i d = 9a v gs =10v (see figure 18) - 32 6 18.5 - nc nc nc electrical characteristics stb11n...
Description N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET

File Size 480.94K  /  17 Page

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    Supertex, Inc.
Part No. AN0332
OCR Text 320v 350 ? 25ma -1.0na an0332cg an0332nd *average current per channel, measured with all eight channels connected in parallel. an0332 8 n-channel latchable power mosfet array ordering information general description the supertex an0332 is a...
Description 8 N-Channel Latchable Power MOSFET Array

File Size 48.61K  /  4 Page

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    AOD9N40

Alpha & Omega Semiconductors
Part No. AOD9N40
OCR Text ...al gate charge v gs =10v, v ds =320v, i d =8a gate source charge gate drain charge i s =1a,v gs =0v v ds =40v, i d =4a v ds =0v, v gs =30v v gs =10v, i d =4a i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c v ds =5v i d =250 ...
Description 400V,8A N-Channel MOSFET

File Size 258.51K  /  6 Page

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