1019.7 pdf Datasheet P5 Full Text Search --- IC-ON-LINE


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1019.7 Datasheet PDF File

For 1019.7 Found Datasheets File :: 694 Search Time::1.656ms
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				IRF[International Rectifier]
Part No.	IRH7450SE
OCR Text	...nt per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the de...
Description	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=11A) TRANSISTOR N-CHANNEL(BVdss=500V Rds(on)=0.51ohm Id=11A)
File Size	99.29K / 4 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	2N5551RHRG 2N5551RHRT
OCR Text	... mil-prf-19500 and test method 1019 of mil-std-750 for total ionizing dose. the table below provides for each monitored parameters of the ...7 7/17 2n5551hr radiation hardness assurance 17 escc radiation assurance each product lot is tested ...
Description	Hi-Rel NPN bipolar transistor 160 V, 0.5 A
File Size	387.76K / 17 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM7360 IRHM8360
OCR Text	...nt per MIL-STD-750, test method 1019 condition A. International Rectifier has imposed a standard gate condition of 12 volts per note 6 and a...7. Pre- and post- irradiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical an...
Description	400V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package REPETITIVE AVALANCHE AND dv/dt RATED 400V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
File Size	318.05K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM7360SE JANSR2N7391
OCR Text	...nt per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the de...
Description	TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A) TRANSISTOR N-CHANNEL(BVdss=400V Rds(on)=0.20ohm Id=22A)
File Size	90.55K / 4 Page	View it Online	Download Datasheet

				http:// CATALYST[Catalyst Semiconductor] ON SEMICONDUCTOR
Part No.	CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CAT28F010P-12T CAT28F010PA-90T CAT28F010N-12T CAT28F010PA-12T CAT28F010TA-12T CAT28F010T-12T CAT28F010PI-12T CAT28F010P-90T CAT28F010T-90T CAT28F010TR-12T CAT28F010TRA-12T CAT28F010TR-90T CAT28F010TRA-90T CAT28F010TRI-12T CAT28F010TRI-90T CAT28F010PI-90T CAT28F010_04 CAT28F010LA-12T CAT28F010 CAT28F010G-12T CAT28F010G-90T CAT28F010GA-12T CAT28F010GA-90T CAT28F010GI-12T CAT28F010GI-90T CAT28F010H-12T CAT28F010H-90T CAT28F010HA-12T CAT28F010HA-90T CAT28F010HI-12T CAT28F010HI-90T CAT28F010HR-12T CAT28F010HR-90T CAT28F010HRA-12T CAT28F010HRA-90T CAT28F010HRI-12T CAT28F010HRI-90T CAT28F010L-12T CAT28F010L-90T CAT28F010NA-12T CAT28F010N-90T CAT28F010NA-90T CAT28F010NI-90T CAT28F010TA-90T CAT28F010LA-90T CAT28F010LI-90T CAT28F010LI-12T CAT28F010PI90
OCR Text	...without notice 1 Doc. No. 1019, Rev. D CAT28F010 PIN CONFIGURATION DIP Package (P, L) VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 ...
Description	1 Megabit CMOS Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 Bulk Erase Flash Memory, 1Mb 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
File Size	430.97K / 15 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHNA8064 IRHNA7064
OCR Text	...nt per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the de...
Description	TRANSISTOR N-CHANNEL
File Size	81.43K / 4 Page	View it Online	Download Datasheet

				Aeroflex, Inc.
Part No.	UT28F64T-45UPA UT28F64T-35UPA UT28F64T-45UCC UT28F64T-35UCC UT28F64T-35PPA
OCR Text	... testing to mil-std-883, method 1019 - total dose: 1e6 rad(si) - let th (0.25) ~ 100 mev-cm 2 /mg - sel immune > 128 mev-cm 2 /...7:0) a(12:0) ce pe oe figure 1. prom block diagram 2 device operation the ut28f64 has three contro...
Description	x8 PROM x8胎膜早破
File Size	88.39K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	RDHA701CD10A2NK
OCR Text	...s 1017 neutron irradiation and 1019 ionizing radiation. these me thods established the basic requirements for the performance and execut...7.0 record keeping 7.1 the reactor facility shall provide dosimetry data for the fast neutron...
Description	Neutron and Total Ionizing Dose Test
File Size	334.73K / 22 Page	View it Online	Download Datasheet

				Aeroflex Circuit Technology
Part No.	5962H3829435BNC 5962H3829435BNX 5962H3829435BXA 5962H3829435BXC 5962H3829435BXX 5962H3829435SNA 5962H3829435SNC 5962H3829435SNX 5962H3829435SXA 5962H3829435SXC 5962H3829436BNA 5962H3829436BNC 5962H3829436BNX 5962H3829436BXA 5962H3829436BXC 5962H3829436BXX 5962H3829436SNA 5962H3829436SNC 5962H3829436SNX 5962H3829436SXA 5962H3829436SXC 5962H3829436SXX 5962H3829437BNA 5962H3829437BNC 5962H3829437BXC 5962H3829437BXX 5962R3829435BNX 5962R3829436BNX 5962R3829437BNX 5962R3829435SNA 5962R3829435SNC 5962R3829435SNX 5962H3829437SNC 5962R3829436SNC 5962R3829437SNC 5962H3829437SXX 5962R3829435SXX 5962R3829437SXX 5962R3829436SXX 5962R3829436SNA 5962R3829436SNX 5962R3829436SXA 5962R3829435BNA 5962R3829435BNC 5962R3829437BNC 5962R3829437BNA 5962R3829435SXC 5962R3829435SXA 5962R3829437SNX 5962H3829437SNX 5962R3829436BNA 5962R3829437SXC 5962R3829437SXA 5962H3829437SXC 5962H3829437SXA 5962R3829435BXA 5962R3829435BXX 5962R3829435BXC 5962H3829437SNA 5962R3829436BXA 5962R3829437BXX
OCR Text	... testing to mil-std-883 method 1019 - total-dose: 1.0e6 rads(si) - dose rate upset: 1.0e9 rads (si)/sec - dose rate survival: 1.0e12 rads (...7:0) column decoders write enable standard products ut67164 radiation-hardened 8k x 8 sram -- seu h...
Description	Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish solder.
File Size	99.86K / 15 Page	View it Online	Download Datasheet

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