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Mitsubishi Electric Corporation
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| Part No. |
MH32S72BAFA-7 MH32S72BAFA-8
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| OCR Text |
... lsis 29.july.1998 mit-ds-0243-0.0 description application main memory unit for computers, microcomputer memory. features type name 100mhz 6ns 6ns mh32s72bafa-8 mh32s72bafa-7 utilizes industry standard 16m x 4 synchronous drams in tsop pac... |
| Description |
Circular Connector; No. of Contacts:19; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:15-19 RoHS Compliant: No
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
790.59K /
54 Page |
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Mitsubishi Electric Corporation
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| Part No. |
MH32S72AQJA-7 MH32S72AQJA-8
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| OCR Text |
0.2 preliminary spec. some contents are subject to change without notice. mitsubishi lsis mitsubishi electric description application main ...7 utilizes industry standard 32m x 4 synchronous drams in tsop package , industry standard resister... |
| Description |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
992.38K /
56 Page |
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Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
MH32S64PHB-7 MH32S64PHB-8 MH32S64PHB-10
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| OCR Text |
...nge without notice. mit-ds-0301-0.0 description the mh32s64phb is 3354432 word x 64 bit synchronous dram module. this consists of sixteen i...7,-8), spd 1.0(-10)) frequency clk access time -8 100mhz 6.0ns(cl=3) (component sdram) 6.0ns(cl=3) 1... |
| Description |
214683648-BIT (3354432- WORD BY 64-BIT)SynchronousDRAM 214683648位（3354432 -文字4位）SynchronousDRAM
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| File Size |
606.16K /
55 Page |
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Infineon
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| Part No. |
HYS72D32501HR-7-C
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| OCR Text |
...ules rdimm data sheet, rev. 1.0, apr. 2004 memory products
edition 2004-04 published by infineon technologies ag, st.-martin-strasse 53,...7?c hys72d32501hr?7?c 184 - pin registered dual-in- memory modules rdimm data sheet, rev. 1.0,... |
| Description |
256MB - 2GB, 184pin
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| File Size |
570.49K /
30 Page |
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Diodes Inc.
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| Part No. |
DMN5L06WK-7
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| OCR Text |
...ility classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: finish matte tin annealed over alloy 42 lead...7.5v forward transconductance |y fs | 200 ms v ds =10v, i d = 0.2a source-drain diode forward vol... |
| Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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| File Size |
127.30K /
5 Page |
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Diodes Inc.
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| Part No. |
DMN5L06DWK-7
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| OCR Text |
...ility classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals connections: see diagram terminals: finish - ...7.5v forward transconductance |y fs | 200 ms v ds =10v, i d = 0.2a source-drain diode forward vol... |
| Description |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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| File Size |
129.00K /
5 Page |
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Diodes Inc.
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| Part No. |
DMN2004WK-7
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| OCR Text |
...ility classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: finish matte tin annealed over alloy 42 lead...7 0.55 0.70 0.9 v gs = 4.5v, i d = 540ma v gs = 2.5v, i d = 500ma v gs = 1.8v, i d = 350ma forward... |
| Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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| File Size |
135.48K /
4 Page |
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Diodes Inc.
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| Part No. |
DMN2004DWK-7
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| OCR Text |
...lity classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals connections: see diagram terminals: finish - ...7 0.55 0.70 0.9 v gs = 4.5v, i d = 540ma v gs = 2.5v, i d = 500ma v gs = 1.8v, i d = 350ma forward... |
| Description |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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| File Size |
138.85K /
4 Page |
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it Online |
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